Tian Fang
Title
Cited by
Cited by
Year
Broadband graphene terahertz modulators enabled by intraband transitions
B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 1-7, 2012
9092012
Carrier statistics and quantum capacitance of graphene sheets and ribbons
T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 092109, 2007
6982007
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
3592012
Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors
A Konar, T Fang, D Jena
Physical Review B 82 (11), 115452, 2010
3052010
Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering
T Fang, A Konar, H Xing, D Jena
Physical Review B 78 (20), 205403, 2008
2922008
Graphene nanoribbon tunnel transistors
Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE Electron Device Letters 29 (12), 1344-1346, 2008
2682008
Unique prospects for graphene-based terahertz modulators
B Sensale-Rodriguez, T Fang, R Yan, MM Kelly, D Jena, L Liu, H Xing
Applied Physics Letters 99 (11), 113104, 2011
2152011
High-field transport in two-dimensional graphene
T Fang, A Konar, H Xing, D Jena
Physical Review B 84 (12), 125450, 2011
1362011
Zener tunneling in semiconducting nanotube and graphene nanoribbon junctions
D Jena, T Fang, Q Zhang, H Xing
Applied Physics Letters 93 (11), 112106, 2008
1172008
Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscopy
B Gao, G Hartland, T Fang, M Kelly, D Jena, H Xing, L Huang
Nano letters 11 (8), 3184-3189, 2011
1042011
Effect of optical phonon scattering on the performance of GaN transistors
T Fang, R Wang, H Xing, S Rajan, D Jena
IEEE Electron Device Letters 33 (5), 709-711, 2012
972012
220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs
R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
822011
Enhancement-Mode InAlN/AlN/GaN HEMTs WithLeakage Current andon/off Current Ratio
R Wang, P Saunier, Y Tang, T Fang, X Gao, S Guo, G Snider, P Fay, ...
IEEE electron device letters 32 (3), 309-311, 2011
762011
Quantum transport in graphene nanoribbons patterned by metal masks
C Lian, K Tahy, T Fang, G Li, HG Xing, D Jena
Applied Physics Letters 96 (10), 103109, 2010
582010
Charge transport in non-polar and semi-polar III-V nitride heterostructures
A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena
Semiconductor Science and Technology 27 (2), 024018, 2012
392012
Electron Device Lett
Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE 12, 1344, 2008
342008
Charged basal stacking fault scattering in nitride semiconductors
A Konar, T Fang, N Sun, D Jena
Applied Physics Letters 98 (2), 022109, 2011
282011
Structural and chemical characterization of the back contact region in high efficiency CdTe solar cells
A Abbas, DM Meysing, J Li, JD Beach, TM Barnes, JM Walls, CA Wolden
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-6, 2015
222015
Self-consistent simulation of CdTe solar cells with active defects
D Brinkman, D Guo, R Akis, C Ringhofer, I Sankin, T Fang, D Vasileska
Journal of Applied Physics 118 (3), 035704, 2015
192015
Numerical simulation of copper migration in single crystal CdTe
D Guo, T Fang, A Moore, D Brinkman, R Akis, D Krasikov, I Sankin, ...
IEEE Journal of Photovoltaics 6 (5), 1286-1291, 2016
172016
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