Bipolar Nonlinear Selector for 1S1R Crossbar Array Applications JJ Huang, YM Tseng, CW Hsu, TH Hou
IEEE Electron Device Letters 32 (10), 1427-1429, 2011
225 2011 One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications JJ Huang, YM Tseng, WC Luo, CW Hsu, TH Hou
2011 international electron devices meeting, 31.7. 1-31.7. 4, 2011
151 2011 Self-rectifying bipolar TaOx /TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
2013 Symposium on VLSI Technology, T166-T167, 2013
146 2013 3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation IT Wang, YC Lin, YF Wang, CW Hsu, TH Hou
2014 IEEE international electron devices meeting, 28.5. 1-28.5. 4, 2014
113 2014 Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory CW Hsu, YF Wang, CC Wan, IT Wang, CT Chou, WL Lai, YJ Lee, TH Hou
Nanotechnology 25 (16), 165202, 2014
94 2014 3D resistive RAM cell design for high-density storage class memory—a review B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fröhlich, ...
Science China Information Sciences 59, 1-21, 2016
73 2016 3D vertical TaOx /TiO2 RRAM with over 103 self-rectifying ratio and sub-μA operating current CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ...
2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013
58 2013 Flexible one diode–one resistor crossbar resistive-switching memory JJ Huang, TH Hou, CW Hsu, YM Tseng, WH Chang, WY Jang, CH Lin
Japanese journal of applied physics 51 (4S), 04DD09, 2012
57 2012 Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo
IEEE electron device letters 34 (7), 885-887, 2013
54 2013 Crossbar array of selector-less TaOx/TiO2 bilayer RRAM CT Chou, B Hudec, CW Hsu, WL Lai, CC Chang, TH Hou
Microelectronics Reliability 55 (11), 2220-2223, 2015
35 2015 Categorization of Multilevel-Cell Storage-Class Memory: An RRAM Example JC Liu, CW Hsu, I Wang, TH Hou
IEEE TRANSACTIONS ON ELECTRON DEVICES 62 (8), 2510, 2015
24 2015 Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof TH Hou, CW Hsu, IT Wang
US Patent 9,059,391, 2015
13 2015 Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture TH Hou, CW Hsu, C Chun-Tse, LAI Wei-Li
US Patent 10,056,432, 2018
11 2018 Investigating MLC variation of filamentary and non-filamentary RRAM JC Liu, IT Wang, CW Hsu, WC Luo, TH Hou
Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014
5 2014 Self-rectifying resistive random access memory cell structure TH Hou, CW Hsu, C Chun-Tse
US Patent 9,978,941, 2018
4 2018 Statistical study of RRAM MLC SET variability induced by filament morphology CW Hsu, X Zheng, Y Wu, TH Hou, HSP Wong
2017 IEEE International Reliability Physics Symposium (IRPS), 5A-3.1-5A-3.5, 2017
2 2017 Interface engineering in homogeneous barrier modulation RRAM for 3D vertical memory applications WL Lai, CT Chou, CW Hsu, JC Liu, B Hudec, CH Ho, WY Jang, CH Lin, ...
Proceedings of International Conference on Solid State Devices and Materials …, 2014
1 2014 Resistive memory apparatus and write-in method thereof TH Hou, CW Hsu, MC Chen
US Patent 9,269,434, 2016
2016 非線性電阻式記憶體於三維超高密度儲存級記憶體之應用 CW Hsu
國立交通大學, 2015
2015 Homogeneous barrier modulation of TaO {sub x}/TiO {sub 2} bilayers for ultra-high endurance three-dimensional storage-class memory CW Hsu, YF Wang, CC Wan, I Wang, CT Chou, WL Lai, TH Hou, YJ Lee
Nanotechnology (Print) 25, 2014
2014