Paul R. Berger
Paul R. Berger
Professor of Electrical and Computer Engineering, Ohio State University
Verified email at - Homepage
Cited by
Cited by
Role of strain and growth conditions on the growth front profile of In_x Ga_(1-x) As on GaAs during the pseudomorphic growth regime
PR Berger, K Chang, P Bhattacharya, J Singh, KK Bajaj
Applied Physics Letters 53 (8), 684-686, 1988
Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles
WJ Yoon, KY Jung, J Liu, T Duraisamy, R Revur, FL Teixeira, S Sengupta, ...
Solar Energy Materials and Solar Cells 94 (2), 128-132, 2010
Room temperature operation of epitaxially grown Si/SiGe/Si resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73, pp. 2191-2193, 1998
Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography
MJ Word, I Adesida, PR Berger
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
Polymer solar cells: P3HT: PCBM and beyond
PR Berger, M Kim
Journal of Renewable and Sustainable Energy 10 (1), 013508, 2018
Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection
Y Xu, PR Berger, JN Wilson, UHF Bunz
Applied physics letters 85 (18), 4219-4221, 2004
Self-aligned and self-limited quantum dot nanoswitches and methods for making same
PR Berger
US Patent 7,015,497, 2006
4.8% efficient poly (3-hexylthiophene)-fullerene derivative (1: 0.8) bulk heterojunction photovoltaic devices with plasma treated AgO_x/indium tin oxide anode modification
WJ Yoon, PR Berger
Applied Physics Letters 92 (1), 013306-013306-3, 2008
Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel
US Patent 6,803,598, 2004
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ...
Applied Physics Letters 78 (6), 814-816, 2001
Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ...
IEEE electron device letters 25 (9), 646-648, 2004
Optical and electronic properties of SiGeC alloys grown on Si substrates
J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ...
Journal of crystal growth 157 (1-4), 386-391, 1995
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
PK Bhattacharya, S Dhar, P Berger, FY Juang
Applied physics letters 49 (8), 470-472, 1986
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ...
Solid-State Electronics 48 (10-11), 1907-1910, 2004
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ...
IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003
Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic
WJ Yoon, SY Chung, PR Berger, SM Asar
Applied Physics Letters 87 (20), 203506, 2005
In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts
W Gao, AS Khan, PR Berger, RG Hunsperger, G Zydzik, HM O’Bryan, ...
Applied physics letters 65 (15), 1930-1932, 1994
Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers
PR Berger, NK Dutta, KD Choquette, G Hasnain, N Chand
Applied Physics Letters 59 (1), 117-119, 1991
A study of strain‐related effects in the molecular‐beam epitaxy growth of InxGa1−xAs on GaAs using reflection high‐energy electron diffraction
PR Berger, K Chang, PK Bhattacharya, J Singh
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
The system can't perform the operation now. Try again later.
Articles 1–20