| Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering N Panwar, B Rajendran, U Ganguly IEEE Electron Device Letters 38 (6), 740-743, 2017 | 68 | 2017 |
| PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly IEEE Electron Device Letters 38 (9), 1212-1215, 2017 | 49 | 2017 |
| Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAM N Panwar, A Khanna, P Kumbhare, I Chakraborty, U Ganguly IEEE Transactions on Electron Devices 64 (1), 137-144, 2016 | 32 | 2016 |
| Memristive synaptic plasticity in Pr0.7Ca0.3MnO3 RRAM by bio-mimetic programming N Panwar, D Kumar, NK Upadhyay, P Arya, U Ganguly, B Rajendran 72nd Device Research Conference, 135-136, 2014 | 26 | 2014 |
| Space Charge Limited Current with Self-heating in PrCaMnO based RRAM I Chakraborty, N Panwar, A Khanna, U Ganguly arXiv preprint arXiv:1605.08755, 2016 | 22 | 2016 |
| A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism P Kumbhare, I Chakraborty, AK Singh, S Chouhan, N Panwar, U Ganguly 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 1-3, 2015 | 22 | 2015 |
| Variability assessment and mitigation by predictive programming in Pr0.7Ca0.3MnO3 based RRAM N Panwar, U Ganguly 2015 73rd Annual Device Research Conference (DRC), 141-142, 2015 | 17 | 2015 |
| Materials parameter extraction using analytical models in PCMO based RRAM I Chakraborty, AK Singh, P Kumbhare, N Panwar, U Ganguly 2015 73rd Annual Device Research Conference (DRC), 87-88, 2015 | 15 | 2015 |
| Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM V Saraswat, S Prasad, A Khanna, A Wagh, A Bhat, N Panwar, S Lashkare, ... IEEE Transactions on Electron Devices 67 (9), 3610-3617, 2020 | 12 | 2020 |
| Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM N Panwar, P Kumbhare, AK Singh, N Venkataramani, U Ganguly MRS Online Proceedings Library 1729, 47-52, 2014 | 12 | 2014 |
| Effect of thermal resistance and scaling on dc-IV characteristics of PCMO based RRAM devices S Chouhan, P Kumbhare, A Khanna, N Panwar, U Ganguly 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 9 | 2017 |
| Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM N Panwar, U Ganguly IEEE Transactions on Electron Devices 66 (1), 829-832, 2018 | 7 | 2018 |
| Bipolar resistive switching with improved memory window in W/ZnFe2O4/Pt devices S Rajarathinam, N Panwar, P Kumbhare, U Ganguly, N Venkataramani Materials Science in Semiconductor Processing 142, 106497, 2022 | 3 | 2022 |
| A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering P Kumbhare, P Meihar, S Rajarathinam, S Chouhan, S Pai, N Panwar, ... MRS Online Proceedings Library (OPL) 1729, 65-70, 2015 | 3 | 2015 |
| Reaction-Drift Model for Switching Transients in PrCaMnO Based Resistive RAM A Khanna, S Prasad, N Panwar, U Ganguly arXiv preprint arXiv:1612.05293, 2016 | 2 | 2016 |
| Conducting Oxide Electrode to Mitigate Mechanical Instability (Bubble Formation) during Operation of La1-xSrxMnO3 (LSMO) based RRAM R Nori, N Ravi Chandra Raju, N Thomas, N Panwar, P Kumbhare, G Rao, ... MRS Online Proceedings Library 1507, 1-6, 2012 | 2 | 2012 |
| Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM N Panwar, G Rao, NRC Raju, R Nori, P Kumbhare, S Deshmukh, SS VS, ... MRS Online Proceedings Library (OPL) 1507, mrsf12-1507-aa09-27, 2013 | 1 | 2013 |
| RF characterization and design of multi-TSV with embedded capacitor N Panwar, AAA Apriyana, Y Lin, CS Tan IEEE International Interconnect Technology Conference, IITC 2019, Brussels …, 2019 | | 2019 |
| Forming- free, Bipolar Resistive Switching in Zinc Ferrite Thin Films UGNV Senthilkumar Rajarathinam, Neeraj Panwar, Pankaj Kumbhare IEEE Non-Volatile Memory Technology Symposium (NVMTS) 17th Annual, 30 August …, 0 | | |
| A Two-Terminal Vertical Selector for High Density Bipolar RRAM at 10nm node P Bafna, P Karkare, P Kumbhare, S Srinivasan, N Panwar, S Lodha, ... | | |
Udayan GangulyProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
