Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates E Dimakis, U Jahn, M Ramsteiner, A Tahraoui, J Grandal, X Kong, ... Nano letters 14 (5), 2604-2609, 2014 | 129 | 2014 |
Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots O Marquardt, D Mourad, S Schulz, T Hickel, G Czycholl, J Neugebauer Physical Review B 78 (23), 235302, 2008 | 71 | 2008 |
Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots S Schulz, MA Caro, EP O’Reilly, O Marquardt Physical Review B 84 (12), 125312, 2011 | 65 | 2011 |
A generalized plane-wave formulation of k· p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures O Marquardt, S Boeck, C Freysoldt, T Hickel, S Schulz, J Neugebauer, ... Computational materials science 95, 280-287, 2014 | 41 | 2014 |
Luminous Efficiency of Axial InxGa1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials O Marquardt, C Hauswald, M Wölz, L Geelhaar, O Brandt Nano letters 13 (7), 3298-3304, 2013 | 38 | 2013 |
Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots O Marquardt, T Hickel, J Neugebauer Journal of Applied Physics 106 (8), 083707, 2009 | 34 | 2009 |
Plane-wave implementation of the real-space k⋅ p formalism and continuum elasticity theory O Marquardt, S Boeck, C Freysoldt, T Hickel, J Neugebauer Computer Physics Communications 181 (4), 765-771, 2010 | 33 | 2010 |
Impact of shell growth on recombination dynamics and exciton–phonon interaction in CdSe–CdS core–shell nanoplatelets AW Achtstein, O Marquardt, R Scott, M Ibrahim, T Riedl, AV Prudnikau, ... ACS nano 12 (9), 9476-9483, 2018 | 32 | 2018 |
Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects K Schuh, S Barthel, O Marquardt, T Hickel, J Neugebauer, G Czycholl, ... Applied Physics Letters 100 (9), 092103, 2012 | 24 | 2012 |
A flexible, plane-wave based multiband model O Marquardt, S Schulz, C Freysoldt, S Boeck, T Hickel, EP O’Reilly, ... Optical and Quantum Electronics 44 (3), 183-188, 2012 | 22 | 2012 |
Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots S Barthel, K Schuh, O Marquardt, T Hickel, J Neugebauer, F Jahnke, ... The European Physical Journal B 86 (11), 1-11, 2013 | 20 | 2013 |
Excitonic Aharonov–Bohm oscillations in core–shell nanowires P Corfdir, O Marquardt, RB Lewis, C Sinito, M Ramsteiner, A Trampert, ... Advanced Materials 31 (3), 1805645, 2019 | 17 | 2019 |
Fine-structure splitting in large-pitch pyramidal quantum dots LO Mereni, O Marquardt, G Juska, V Dimastrodonato, EP O’Reilly, ... Physical Review B 85 (15), 155453, 2012 | 16 | 2012 |
Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings KM Gambaryan, VM Aroutiounian, VG Harutyunyan, O Marquardt, ... Applied Physics Letters 100 (3), 033104, 2012 | 16 | 2012 |
Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures O Marquardt, T Hickel, J Neugebauer, KM Gambaryan, VM Aroutiounian Journal of Applied Physics 110 (4), 043708, 2011 | 16 | 2011 |
Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties SK Patra, O Marquardt, S Schulz Optical and Quantum Electronics 48 (2), 1-10, 2016 | 14 | 2016 |
Electronic Structure of Polar and Semipolar (11 2¯ 2)-Oriented Nitride Dot-in-a-Well Systems S Schulz, O Marquardt Physical Review Applied 3 (6), 064020, 2015 | 14 | 2015 |
Modeling the electronic properties of GaAs polytype nanostructures: Impact of strain on the conduction band character O Marquardt, M Ramsteiner, P Corfdir, L Geelhaar, O Brandt Physical Review B 95 (24), 245309, 2017 | 13 | 2017 |
Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1–xN/GaN Axial Nanowire Heterostructures O Marquardt, L Geelhaar, O Brandt Nano Letters 15 (7), 4289-4294, 2015 | 13 | 2015 |
Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k⋅ p Hamiltonian O Marquardt, EP O’Reilly, S Schulz Journal of Physics: Condensed Matter 26 (3), 035303, 2013 | 13 | 2013 |