| Germanium based field-effect transistors: Challenges and opportunities PS Goley, MK Hudait Materials 7 (3), 2301-2339, 2014 | 157 | 2014 |
| Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors M Clavel, P Goley, N Jain, Y Zhu, MK Hudait IEEE Journal of the Electron Devices Society 3 (3), 184-193, 2015 | 37 | 2015 |
| Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: Suitability for low-power fin field-effect transistors MK Hudait, M Clavel, P Goley, N Jain, Y Zhu Scientific reports 4 (1), 1-6, 2014 | 35 | 2014 |
| Heterointerface engineering of broken-gap InAs/GaSb multilayer structures JS Liu, Y Zhu, PS Goley, MK Hudait ACS applied materials & interfaces 7 (4), 2512-2517, 2015 | 28 | 2015 |
| Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications MK Hudait, M Clavel, Y Zhu, PS Goley, S Kundu, D Maurya, S Priya ACS applied materials & interfaces 7 (9), 5471-5479, 2015 | 27 | 2015 |
| Heterogeneously-grown tunable tensile strained germanium on silicon for photonic devices M Clavel, D Saladukha, PS Goley, TJ Ochalski, F Murphy-Armando, ... ACS Applied Materials & Interfaces 7 (48), 26470-26481, 2015 | 23 | 2015 |
| Potential limitations on integrated silicon photonic waveguides operating in a heavy ion environment PS Goley, ZE Fleetwood, JD Cressler IEEE Transactions on Nuclear Science 65 (1), 141-148, 2017 | 18 | 2017 |
| Heteroepitaxial Ge MOS devices on Si using composite AlAs/GaAs buffer PD Nguyen, MB Clavel, PS Goley, JS Liu, NP Allen, LJ Guido, MK Hudait IEEE Journal of the Electron Devices Society 3 (4), 341-348, 2015 | 17 | 2015 |
| Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ... IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018 | 15 | 2018 |
| Optical single-event transients induced in integrated silicon-photonic waveguides by two-photon absorption GN Tzintzarov, A Ildefonso, JW Teng, M Frounchi, A Djikeng, P Iyengar, ... IEEE Transactions on Nuclear Science 68 (5), 785-792, 2021 | 12 | 2021 |
| Comparison of single-event transients in SiGe HBTs on bulk and thick-film SOI A Ildefonso, GN Tzintzarov, D Nergui, AP Omprakash, PS Goley, ... IEEE Transactions on Nuclear Science 67 (1), 71-80, 2019 | 12 | 2019 |
| Magnetotransport properties of epitaxial Ge/AlAs heterostructures integrated on GaAs and silicon MK Hudait, M Clavel, PS Goley, Y Xie, JJ Heremans ACS Applied Materials & Interfaces 7 (40), 22315-22321, 2015 | 9 | 2015 |
| Design, theoretical, and experimental investigation of tensile-strained germanium quantum-well laser structure MK Hudait, F Murphy-Armando, D Saladukha, MB Clavel, PS Goley, ... ACS Applied Electronic Materials 3 (10), 4535-4547, 2021 | 8 | 2021 |
| Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials Y Zhu, M Clavel, P Goley, MK Hudait Journal of Applied Physics 116 (13), 134304, 2014 | 8 | 2014 |
| Response of waveguide-integrated germanium-on-silicon pin photodiodes to neutron displacement damage PS Goley, NA Dodds, M Frounchi, GN Tzintzarov, RN Nowlin, JD Cressler IEEE Transactions on Nuclear Science 67 (1), 296-304, 2019 | 7 | 2019 |
| Mixed-anion GaAs1− ySby graded buffer heterogeneously integrated on Si by molecular beam epitaxy MK Hudait, Y Zhu, P Goley, M Clavel, N Jain Applied Physics Express 8 (2), 025501, 2015 | 6 | 2015 |
| Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform GN Tzintzarov, A Ildefonso, PS Goley, M Frounchi, D Nergui, SG Rao, ... IEEE Transactions on Nuclear Science 67 (1), 260-267, 2019 | 5 | 2019 |
| Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ... IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019 | 4 | 2019 |
| Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure MK Hudait, M Clavel, PS Goley, Y Xie, JJ Heremans, Y Jiang, Z Jiang, ... Materials Advances 1 (5), 1099-1112, 2020 | 2 | 2020 |
| Silicon-Based Electronic Photonic Integrated Circuits: Resiliency in the Space Environment PS Goley, JD Cressler Georgia Institute of Technology Atlanta United States, 2019 | 2 | 2019 |
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPVerified email at vt.edu
