Suivre
Luca Lamagna
Luca Lamagna
Laboratorio MDM, CNR-IMM; STMicroelectronics
Adresse e-mail validée de st.com - Page d'accueil
Titre
Citée par
Citée par
Année
Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
E Ahvenniemi, AR Akbashev, S Ali, M Bechelany, M Berdova, S Boyadjiev, ...
Journal of Vacuum Science & Technology A 35 (1), 2017
1132017
Vibrational and electrical properties of hexagonal La2O3 films
G Scarel, A Debernardi, D Tsoutsou, S Spiga, SC Capelli, L Lamagna, ...
Applied Physics Letters 91 (10), 2007
742007
Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method
Y Shimizu, H Takamizawa, K Inoue, F Yano, Y Nagai, L Lamagna, ...
Nanoscale 6 (2), 706-710, 2013
572013
Atomic layer deposition of Ru from CpRu (CO) 2Et using O2 gas and O2 plasma
N Leick, ROF Verkuijlen, L Lamagna, E Langereis, S Rushworth, ...
Journal of Vacuum Science & Technology A 29 (2), 2011
572011
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, ...
Microelectronic Engineering 85 (12), 2411-2413, 2008
552008
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
C Wiemer, L Lamagna, M Fanciulli
Semiconductor Science and Technology 27 (7), 074013, 2012
492012
Dielectric properties of Er− doped HfO2 (Er∼ 15%) grown by atomic layer deposition for high-κ gate stacks
C Wiemer, L Lamagna, S Baldovino, M Perego, S Schamm-Chardon, ...
Applied Physics Letters 96 (18), 2010
482010
Cubic/tetragonal phase stabilization in high-κ ZrO2 thin films grown using O3-based atomic layer deposition
A Lamperti, L Lamagna, G Congedo, S Spiga
Journal of The Electrochemical Society 158 (10), G221, 2011
472011
Atomic layer deposition of LaxZr1− xO2− δ (x= 0.25) high-k dielectrics for advanced gate stacks
D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, ...
Applied Physics Letters 94 (5), 2009
412009
O3-based atomic layer deposition of hexagonal La2O3 films on Si (100) and Ge (100) substrates
L Lamagna, C Wiemer, M Perego, SN Volkos, S Baldovino, D Tsoutsou, ...
Journal of Applied Physics 108 (8), 2010
402010
Chemical/Structural nanocharacterization and electrical properties of ALD-Grown La2O3∕ Si interfaces for advanced gate stacks
S Schamm, PE Coulon, S Miao, SN Volkos, LH Lu, L Lamagna, C Wiemer, ...
Journal of The Electrochemical Society 156 (1), H1, 2008
362008
Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge (100)
L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, ...
Applied Physics Letters 95 (12), 2009
352009
The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition
A Andreozzi, L Lamagna, G Seguini, M Fanciulli, S Schamm-Chardon, ...
Nanotechnology 22 (33), 335303, 2011
322011
Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0. 15Ga0. 85As) substrates
A Molle, G Brammertz, L Lamagna, M Fanciulli, M Meuris, S Spiga
Applied Physics Letters 95 (2), 2009
312009
Mechanisms for substrate-enhanced growth during the early stages of atomic layer deposition of alumina onto silicon nitride surfaces
L Lamagna, C Wiemer, M Perego, S Spiga, J Rodriguez, D Santiago Coll, ...
Chemistry of Materials 24 (6), 1080-1090, 2012
302012
Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
VV Afanas’ev, HY Chou, M Houssa, A Stesmans, L Lamagna, A Lamperti, ...
Applied Physics Letters 99 (17), 2011
252011
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode
S Spiga, R Rao, L Lamagna, C Wiemer, G Congedo, A Lamperti, A Molle, ...
Journal of Applied Physics 112 (1), 2012
242012
Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer
G Congedo, A Lamperti, L Lamagna, S Spiga
Microelectronic engineering 88 (7), 1174-1177, 2011
242011
Thermal stability of high‐κ oxides on SiO2/Si or SixNy/SiO2/Si for charge‐trapping nonvolatile memories
A Lamperti, E Cianci, O Salicio, L Lamagna, S Spiga, M Fanciulli
Surface and interface analysis 45 (1), 390-393, 2013
222013
Tuning the polarity of Si-nanowire transistors without the use of doping
WM Weber, L Geelhaar, L Lamagna, M Fanciulli, F Kreupl, E Unger, ...
2008 8th IEEE Conference on Nanotechnology, 580-581, 2008
212008
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20