| Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017 | 462 | 2017 |
| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 328 | 2018 |
| Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017 | 280 | 2017 |
| MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 129 | 2019 |
| LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018 | 110 | 2018 |
| Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020 | 105 | 2020 |
| Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019 | 98 | 2019 |
| Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015 | 93 | 2015 |
| Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018 | 74 | 2018 |
| MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020 | 73 | 2020 |
| Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ... Journal of Applied Physics 121 (9), 2017 | 68 | 2017 |
| High current density 2D/3D MoS2/GaN Esaki tunnel diodes S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ... Applied Physics Letters 109 (18), 2016 | 67 | 2016 |
| Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan Applied Physics Letters 108 (13), 2016 | 62 | 2016 |
| Predicting length of stay and conversion to open cholecystectomy for acute cholecystitis using the 2013 Tokyo Guidelines in a US population G Paul Wright, K Stilwell, J Johnson, MT Hefty, MH Chung Journal of Hepato‐Biliary‐Pancreatic Sciences 22 (11), 795-801, 2015 | 59 | 2015 |
| First-in-human phase 1 dose escalation and expansion of a novel combination, anti-CSF-1 receptor (cabiralizumab) plus anti-PD-1 (nivolumab), in patients with advanced solid tumors Z Wainberg, S Piha-Paul, J Luke, E Kim, J Thompson, N Pfanzelter J Immunother Cancer 5 (89), 10.1186, 2017 | 52 | 2017 |
| Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy S Im, Z Chen, JM Johnson, P Zhao, GH Yoo, ES Park, Y Wang, DA Muller, ... Ultramicroscopy 195, 189-193, 2018 | 48 | 2018 |
| Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ... Applied Physics Letters 111 (5), 2017 | 45 | 2017 |
| Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021 | 42 | 2021 |
| Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020 | 42 | 2020 |
| MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020 | 37 | 2020 |
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
![Hsien-Lien Huang [ORCID:0000-0001-9598-9031]](https://scholar.googleusercontent.com/citations?view_op=small_photo&user=WVK8AVAAAAAJ&citpid=1)
![Menglin Zhu [ORCID: 0000-0001-6830-2636]](https://scholar.googleusercontent.com/citations?view_op=small_photo&user=tkEx8OQAAAAJ&citpid=4)
