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Jared M Johnson
Jared M Johnson
The Ohio State University
Verified email at thermofisher.com
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Cited by
Year
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ...
Nature 544 (7650), 340-343, 2017
3552017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
2662018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
2372017
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao
Applied Physics Letters 112 (5), 052104, 2018
852018
MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 120602, 2019
832019
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 141103, 2015
822015
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
702019
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 071107, 2018
592018
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ...
Journal of Applied Physics 121 (9), 094302, 2017
582017
High current density 2D/3D MoS2/GaN Esaki tunnel diodes
S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ...
Applied Physics Letters 109 (18), 183505, 2016
572016
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan
Applied Physics Letters 108 (13), 131103, 2016
572016
Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films
AFMAU Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 031104, 2020
562020
First-in-human phase 1 dose escalation and expansion of a novel combination, anti-CSF-1 receptor (cabiralizumab) plus anti-PD-1 (nivolumab), in patients with advanced solid tumors
Z Wainberg, S Piha-Paul, J Luke, E Kim, J Thompson, N Pfanzelter
J Immunother Cancer 5 (89), 10.1186, 2017
522017
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ...
Applied Physics Letters 111 (5), 051104, 2017
372017
MOCVD Epitaxy of Ultrawide Bandgap beta-(AlxGa1-x)(2) O-3 with High-Al Composition on (100) beta-Ga2O3 Substrates
AFM Bhuiyan, A Uddin, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
352020
Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy
S Im, Z Chen, JM Johnson, P Zhao, GH Yoo, ES Park, Y Wang, DA Muller, ...
Ultramicroscopy 195, 189-193, 2018
342018
Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy
JM Johnson, S Im, W Windl, J Hwang
Ultramicroscopy 172, 17-29, 2017
292017
Engineering 1D quantum stripes from superlattices of 2D layered materials
JH Gruenewald, J Kim, HS Kim, JM Johnson, J Hwang, M Souri, J Terzic, ...
Advanced Materials 29 (1), 1603798, 2017
222017
Engineering 1D quantum stripes from superlattices of 2D layered materials
JH Gruenewald, J Kim, HS Kim, JM Johnson, J Hwang, M Souri, J Terzic, ...
Advanced Materials 29 (1), 1603798, 2017
222017
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
212020
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