Jared M Johnson

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Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityVerified email at osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
Yuewei ZhangUCSBVerified email at ucsb.edu
Zixuan FengThe Ohio State UniversityVerified email at osu.edu
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellVerified email at uml.edu
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerified email at osu.edu
Fatih AkyolYıldız Teknik ÜniversitesiVerified email at yildiz.edu.tr
Menglin Zhu [ORCID: 0000-0001-683...Postdoctoral Researcher, MITVerified email at mit.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityVerified email at osu.edu
Soohyun ImThe State University of New York at BuffaloVerified email at buffalo.edu
Choong Hee Lee (Postdoctoral resear...National Renewable Energy Laboratory (NREL)Verified email at nrel.gov
Md Rezaul KarimIntel CorporationVerified email at osu.edu

Jared M Johnson

The Ohio State University

Verified email at thermofisher.com

STEM Ga2O3


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017	570	2017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	403	2018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	327	2017
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	166	2019
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019	142	2019
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	141	2018
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	131	2020
Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015	102	2015
MOCVD Epitaxy of Ultrawide Bandgap β-(Al_xGa_1–x)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	94	2020
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018	90	2018
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ... Journal of Applied Physics 121 (9), 2017	86	2017
High current density 2D/3D MoS2/GaN Esaki tunnel diodes S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ... Applied Physics Letters 109 (18), 2016	77	2016
Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy S Im, Z Chen, JM Johnson, P Zhao, GH Yoo, ES Park, Y Wang, DA Muller, ... Ultramicroscopy 195, 189-193, 2018	66	2018
Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance F Akyol, S Krishnamoorthy, Y Zhang, J Johnson, J Hwang, S Rajan Applied Physics Letters 108 (13), 2016	63	2016
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020	58	2020
First-in-human phase 1 dose escalation and expansion of a novel combination, anti-CSF-1 receptor (cabiralizumab) plus anti-PD-1 (nivolumab), in patients with advanced solid tumors Z Wainberg, S Piha-Paul, J Luke, E Kim, J Thompson, CD Britten, ... J Immunother Cancer 5 (89), 10.1186, 2017	56	2017
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021	54	2021
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ... Applied Physics Letters 111 (5), 2017	53	2017
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020	50	2020
Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy JM Johnson, S Im, W Windl, J Hwang Ultramicroscopy 172, 17-29, 2017	34	2017

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