Quentin Smets
Quentin Smets
Geverifieerd e-mailadres voor imec.be
Geciteerd door
Geciteerd door
Figure of merit for and identification of sub-60 mV/decade devices
WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102 (1), 013510, 2013
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 184503, 2014
Tunnel field effect transistor and method for making thereof
AS Verhulst, Q Smets
US Patent 9,318,583, 2016
Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
A Alian, J Franco, A Vandooren, Y Mols, A Verhulst, S El Kazzi, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2015
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
Y Balaji, Q Smets, CJL De La Rosa, AKA Lu, D Chiappe, T Agarwal, ...
IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018
Perspective of tunnel-FET for future low-power technology nodes
AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism
B Groven, A Nalin Mehta, H Bender, J Meersschaut, T Nuytten, ...
Chemistry of Materials 30 (21), 7648-7663, 2018
Calibration of bulk trap-assisted tunneling and Shockley–Read–Hall currents and impact on InGaAs tunnel-FETs
Q Smets, AS Verhulst, E Simoen, D Gundlach, C Richter, N Collaert, ...
IEEE Transactions on Electron Devices 64 (9), 3622-3626, 2017
Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction
Q Smets, AS Verhulst, S El Kazzi, D Gundlach, CA Richter, A Mocuta, ...
IEEE Transactions on Electron Devices 63 (11), 4248-4254, 2016
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
B Groven, AN Mehta, H Bender, Q Smets, J Meersschaut, A Franquet, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (1 …, 2018
WS2 transistors on 300 mm wafers with BEOL compatibility
T Schram, Q Smets, B Groven, MH Heyne, E Kunnen, A Thiam, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 212-215, 2017
Staggered band gap n+ In0. 5Ga0. 5As/p+ GaAs0. 5Sb0. 5 Esaki diode investigations for TFET device predictions
S El Kazzi, Q Smets, M Ezzedini, R Rooyackers, A Verhulst, B Douhard, ...
Journal of Crystal Growth 424, 62-67, 2015
2D materials: Roadmap to CMOS integration
C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018
Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes
J Bizindavyi, AS Verhulst, Q Smets, D Verreck, B Sorée, G Groeseneken
IEEE Journal of the Electron Devices Society 6, 633-641, 2018
Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification
Q Smets, AS Verhulst, K Martens, HC Lin, SE Kazzi, D Verreck, E Simoen, ...
Applied Physics Letters 105 (20), 203507, 2014
Extracting the effective bandgap of heterojunctions using Esaki diode IV measurements
Q Smets, AS Verhulst, S El Kazzi, D Verreck, O Richard, H Bender, ...
Applied Physics Letters 107 (7), 072101, 2015
Analog parameters of solid source Zn diffusion In X Ga1− X As nTFETs down to 10 K
C Bordallo, JA Martino, PGD Agopian, A Alian, Y Mols, R Rooyackers, ...
Semiconductor Science and Technology 31 (12), 124001, 2016
Tunnel field effect transistor device and method for making the device
Q Smets, AS Verhulst, R Rooyackers, M Heyns
US Patent 9,070,720, 2015
Influence of doping and tunneling interface stoichiometry on n+ In0. 5Ga0. 5As/p+ GaAs0. 5Sb0. 5 esaki diode behavior
S El Kazzi, A Alireza, CCM Bordallo, Q Smets, L Desplanque, X Wallart, ...
ECS Transactions 72 (3), 73, 2016
Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ...
Nanotechnology 31 (12), 125604, 2020
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