Fundamentals of applied electromagnetics 6e FT Ulaby, E Michielssen, U Ravaioli Boston, Massachussetts: Prentice Hall, 2010 | 824* | 2010 |

Theory for a quantum modulated transistor F Sols, M Macucci, U Ravaioli, K Hess Journal of Applied Physics 66 (8), 3892-3906, 1989 | 474 | 1989 |

On the possibility of transistor action based on quantum interference phenomena F Sols, M Macucci, U Ravaioli, K Hess Applied physics letters 54 (4), 350-352, 1989 | 396 | 1989 |

Impact of phonon-surface roughness scattering on thermal conductivity of thin Si nanowires P Martin, Z Aksamija, E Pop, U Ravaioli Physical review letters 102 (12), 125503, 2009 | 374 | 2009 |

Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures A Trellakis, AT Galick, A Pacelli, U Ravaioli Journal of Applied Physics 81 (12), 7880-7884, 1997 | 345 | 1997 |

Fundamentals of applied electromagnetics FT Ulaby, E Michielssen, U Ravaioli Pearson, 2015 | 338 | 2015 |

An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects D Chen, EC Kan, U Ravaioli, CW Shu, RW Dutton IEEE Electron Device Letters 13 (1), 26-28, 1992 | 232 | 1992 |

Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method S Yamakawa, H Ueno, K Taniguchi, C Hamaguchi, K Miyatsuji, K Masaki, ... Journal of applied physics 79 (2), 911-916, 1996 | 187 | 1996 |

Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field Y Li, SV Rotkin, U Ravaioli Nano Letters 3 (2), 183-187, 2003 | 179 | 2003 |

A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation B Winstead, U Ravaioli IEEE Transactions on Electron Devices 50 (2), 440-446, 2003 | 138 | 2003 |

Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires PN Martin, Z Aksamija, E Pop, U Ravaioli Nano letters 10 (4), 1120-1124, 2010 | 131 | 2010 |

Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo technique B Winstead, U Ravaioli IEEE transactions on electron devices 47 (6), 1241-1246, 2000 | 121 | 2000 |

Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices CJ Wordelman, U Ravaioli IEEE Transactions on Electron Devices 47 (2), 410-416, 2000 | 113 | 2000 |

Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors A Duncan, U Ravaioli, J Jakumeit IEEE Transactions on Electron Devices 45 (4), 867-876, 1998 | 112 | 1998 |

Investigation of ballistic transport through resonant-tunnelling quantum wells using Wigner function approach U Ravaioli, MA Osman, W Pötz, N Kluksdahl, DK Ferry Physica B+ C 134 (1-3), 36-40, 1985 | 112 | 1985 |

Efficient numerical simulation of electron states in quantum wires T Kerkhoven, AT Galick, U Ravaioli, JH Arends, Y Saad Journal of applied physics 68 (7), 3461-3469, 1990 | 98 | 1990 |

Finite-size effect and wall polarization in a carbon nanotube channel D Lu, Y Li, SV Rotkin, U Ravaioli, K Schulten Nano letters 4 (12), 2383-2387, 2004 | 80 | 2004 |

MODFET ensemble Monte Carlo model including the quasi-two-dimensional electron gas U Ravaioli, DK Ferry IEEE transactions on electron devices 33 (5), 677-681, 1986 | 78 | 1986 |

Quasi-three-dimensional Green’s-function simulation of coupled electron waveguides M Macucci, A Galick, U Ravaioli Physical Review B 52 (7), 5210, 1995 | 76 | 1995 |

Monte Carlo simulations of double-gate MOSFETs GA Kathawala, B Winstead, U Ravaioli IEEE Transactions on electron devices 50 (12), 2467-2473, 2003 | 66 | 2003 |