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Umberto Ravaioli
Umberto Ravaioli
Professor of electrical and computer engineering, university of illinois
Verified email at illinois.edu
Title
Cited by
Cited by
Year
Fundamentals of applied electromagnetics
FT Ulaby, U Ravaioli
Pearson, 2015
8392015
Theory for a quantum modulated transistor
F Sols, M Macucci, U Ravaioli, K Hess
Journal of Applied Physics 66 (8), 3892-3906, 1989
5071989
Impact of phonon-surface roughness scattering on thermal conductivity of thin Si nanowires
P Martin, Z Aksamija, E Pop, U Ravaioli
Physical review letters 102 (12), 125503, 2009
4232009
On the possibility of transistor action based on quantum interference phenomena
F Sols, M Macucci, U Ravaioli, K Hess
Applied Physics Letters 54 (4), 350-352, 1989
4161989
Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures
A Trellakis, AT Galick, A Pacelli, U Ravaioli
Journal of Applied Physics 81 (12), 7880-7884, 1997
3821997
An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
D Chen, EC Kan, U Ravaioli, CW Shu, RW Dutton
IEEE Electron Device Letters 13 (1), 26-28, 1992
2481992
Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method
S Yamakawa, H Ueno, K Taniguchi, C Hamaguchi, K Miyatsuji, K Masaki, ...
Journal of applied physics 79 (2), 911-916, 1996
1961996
Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field
Y Li, SV Rotkin, U Ravaioli
Nano Letters 3 (2), 183-187, 2003
1822003
Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires
PN Martin, Z Aksamija, E Pop, U Ravaioli
Nano letters 10 (4), 1120-1124, 2010
1582010
Prediction and optimization of mechanical properties of composites using convolutional neural networks
DW Abueidda, M Almasri, R Ammourah, U Ravaioli, IM Jasiuk, NA Sobh
Composite Structures 227, 111264, 2019
1502019
A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation
B Winstead, U Ravaioli
IEEE Transactions on Electron Devices 50 (2), 440-446, 2003
1402003
Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo technique
B Winstead, U Ravaioli
IEEE transactions on electron devices 47 (6), 1241-1246, 2000
1282000
Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices
CJ Wordelman, U Ravaioli
IEEE Transactions on Electron Devices 47 (2), 410-416, 2000
1232000
Investigation of ballistic transport through resonant-tunnelling quantum wells using Wigner function approach
U Ravaioli, MA Osman, W Pötz, N Kluksdahl, DK Ferry
Physica B+ C 134 (1-3), 36-40, 1985
1201985
Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors
A Duncan, U Ravaioli, J Jakumeit
IEEE Transactions on Electron Devices 45 (4), 867-876, 1998
1191998
Efficient numerical simulation of electron states in quantum wires
T Kerkhoven, AT Galick, U Ravaioli, JH Arends, Y Saad
Journal of applied physics 68 (7), 3461-3469, 1990
1011990
Finite-size effect and wall polarization in a carbon nanotube channel
D Lu, Y Li, SV Rotkin, U Ravaioli, K Schulten
Nano letters 4 (12), 2383-2387, 2004
892004
MODFET ensemble Monte Carlo model including the quasi-two-dimensional electron gas
U Ravaioli, DK Ferry
IEEE transactions on electron devices 33 (5), 677-681, 1986
811986
Quasi-three-dimensional Green’s-function simulation of coupled electron waveguides
M Macucci, A Galick, U Ravaioli
Physical Review B 52 (7), 5210, 1995
791995
Empirical nanotube model for biological applications
D Lu, Y Li, U Ravaioli, K Schulten
The Journal of Physical Chemistry B 109 (23), 11461-11467, 2005
692005
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