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Tarek Ameen
Tarek Ameen
Other namesTarek Ahmed Ameen Beshari
Component Design Engineer at Intel
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Few-layer phosphorene: An ideal 2D material for tunnel transistors
TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman
Scientific reports 6 (1), 28515, 2016
1172016
Dielectric engineered tunnel field-effect transistor
H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (10), 1097-1100, 2015
1052015
Complementary black phosphorus tunneling field-effect transistors
P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ...
ACS nano 13 (1), 377-385, 2018
952018
Saving Moore’s law down to 1 nm channels with anisotropic effective mass
H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman
Scientific reports 6 (1), 31501, 2016
902016
Thickness engineered tunnel field-effect transistors based on phosphorene
FW Chen, H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman
IEEE Electron Device Letters 38 (1), 130-133, 2016
752016
Dramatic impact of dimensionality on the electrostatics of PN junctions and its sensing and switching applications
H Ilatikhameneh, T Ameen, F Chen, H Sahasrabudhe, G Klimeck, ...
IEEE Transactions on Nanotechnology 17 (2), 293-298, 2018
442018
WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
CS Pang, CY Chen, T Ameen, S Zhang, H Ilatikhameneh, R Rahman, ...
Small 15 (41), 1902770, 2019
292019
Sensitivity challenge of steep transistors
H Ilatikhameneh, TA Ameen, CY Chen, G Klimeck, R Rahman
IEEE Transactions on Electron Devices 65 (4), 1633-1639, 2018
262018
Combination of equilibrium and nonequilibrium carrier statistics into an atomistic quantum transport model for tunneling heterojunctions
TA Ameen, H Ilatikhameneh, JZ Huang, M Povolotskyi, R Rahman, ...
IEEE Transactions on Electron Devices 64 (6), 2512-2518, 2017
262017
Alloy engineered nitride tunneling field-effect transistor: A solution for the challenge of heterojunction tfets
TA Ameen, H Ilatikhameneh, P Fay, A Seabaugh, R Rahman, G Klimeck
IEEE Transactions on Electron Devices 66 (1), 736-742, 2018
252018
Polarization dependence of absorption by bound electrons in self-assembled quantum dots
TA Ameen, YM El-Batawy
Journal of Applied Physics 113 (19), 2013
232013
A multiscale modeling of triple-heterojunction tunneling FETs
JZ Huang, P Long, M Povolotskyi, H Ilatikhameneh, TA Ameen, ...
IEEE Transactions on Electron Devices 64 (6), 2728-2735, 2017
222017
Universal behavior of atomistic strain in self-assembled quantum dots
H Ilatikhameneh, TA Ameen, G Klimeck, R Rahman
IEEE Journal of Quantum Electronics 52 (7), 1-8, 2016
172016
Channel thickness optimization for ultrathin and 2-D chemically doped TFETs
CY Chen, TA Ameen, H Ilatikhameneh, R Rahman, G Klimeck, ...
IEEE Transactions on Electron Devices 65 (10), 4614-4621, 2018
162018
Modeling light absorption by bound electrons in self-assembled quantum dots
TA Ameen, YM El-Batawy, AA Abouelsaood
Journal of Applied Physics 113 (8), 2013
162013
Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors
TA Ameen, YM El-Batawy, AA Abouelsaood
Journal of Applied Physics 115 (6), 2014
152014
Doping profile engineered triple heterojunction TFETs with 12-nm body thickness
CY Chen, HY Tseng, H Ilatikhameneh, TA Ameen, G Klimeck, MJ Rodwell, ...
IEEE Transactions on Electron Devices 68 (6), 3104-3111, 2021
122021
Novel III-N heterostructure devices for low-power logic and more
P Fay, W Li, L Cao, K Pourang, SM Islam, C Lund, S Saima, ...
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 767-769, 2016
72016
Bound to continuum absorption coefficient for spherical and conical quantum dots
TA Ameen, YM El-Batawy
Optical and Quantum Electronics 47, 149-157, 2015
72015
Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots
T Ameen, H Ilatikhameneh, J Charles, Y Hsueh, S Chen, J Fonseca, ...
14th IEEE International Conference on Nanotechnology, 921-924, 2014
62014
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