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Ranbir Singh
Ranbir Singh
GeneSiC, Cree, NIST, Cree Research, North Carolina State University
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
Status and prospects for SiC power MOSFETs
JA Cooper, MR Melloch, R Singh, A Agarwal, JW Palmour
IEEE Transactions on Electron Devices 49 (4), 658-664, 2002
5712002
Reliability and performance limitations in SiC power devices
R Singh
Microelectronics reliability 46 (5-6), 713-730, 2006
3322006
SiC power Schottky and PiN diodes
R Singh, JA Cooper, MR Melloch, TP Chow, JW Palmour
IEEE Transactions on Electron Devices 49 (4), 665-672, 2002
3022002
Silicon carbide metal-insulator semiconductor field effect transistor
R Singh, JW Palmour
US Patent 5,719,409, 1998
2731998
1800 V NPN bipolar junction transistors in 4H-SiC
SH Ryu, AK Agarwal, R Singh, JW Palmour
IEEE Electron Device Letters 22 (3), 124-126, 2001
2332001
SiC power diodes provide breakthrough performance for a wide range of applications
AR Hefner, R Singh, JS Lai, DW Berning, S Bouche, C Chapuy
IEEE Transactions on Power Electronics 16 (2), 273-280, 2001
1922001
12-19 kV 4H-SiC pin diodes with low power loss
Y Sugawara, D Takayama, K AsanO, R Singh, J Palmour, T Hayashi
Proceedings of the 13th International Symposium on Power Semiconductor …, 2001
1612001
Progress in SiC: from material growth to commercial device development
CH Carter Jr, VF Tsvetkov, RC Glass, D Henshall, M Brady, M St G, ...
Materials Science and Engineering: B 61, 1-8, 1999
1521999
Reliability of SiC MOS devices
R Singh, AR Hefner
Solid-State Electronics 48 (10-11), 1717-1720, 2004
1322004
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field …
SH Ryu, A Agarwal, MK Das, LA Lipkin, JW Palmour, R Singh
US Patent 6,956,238, 2005
1202005
Latch-up free power MOS-bipolar transistor
R Singh, JW Palmour
US Patent 6,121,633, 2000
1122000
High-power 4H-SiC JBS rectifiers
R Singh, DC Capell, AR Hefner, J Lai, JW Palmour
IEEE Transactions on Electron Devices 49 (11), 2054-2063, 2002
1082002
Silicon carbide for power devices
JW Palmour, R Singh, RC Glass, O Kordina, CH Carter
Proceedings of 9th International Symposium on Power Semiconductor Devices …, 1997
1081997
" Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes
ME Levinshtein, TT Mnatsakanov, P Ivanov, JW Palmour, SL Rumyantsev, ...
IEEE Transactions on Electron Devices 48 (8), 1703-1710, 2001
1042001
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
TR McNutt, AR Hefner, HA Mantooth, J Duliere, DW Berning, R Singh
IEEE Transactions on Power Electronics 19 (3), 573-581, 2004
942004
Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
R Singh
US Patent 6,673,662, 2004
882004
Large area, ultra-high voltage 4H-SiC pin rectifiers
R Singh, KG Irvine, DC Capell, JT Richmond, D Berning, AR Hefner, ...
IEEE Transactions on Electron Devices 49 (12), 2308-2316, 2002
862002
3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
SH Ryu, AK Agarwal, R Singh, JW Palmour
IEEE Electron Device Letters 22 (3), 127-129, 2001
862001
Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
NV Dyakonova, PA Ivanov, VA Kozlov, ME Levinshtein, JW Palmour, ...
IEEE Transactions on Electron Devices 46 (11), 2188-2194, 1999
831999
The charged particle response of silicon carbide semiconductor radiation detectors
FH Ruddy, AR Dulloo, JG Seidel, JW Palmour, R Singh
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003
822003
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