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Stefano Leone
Stefano Leone
Fraunhofer IAF, Group leader
Verified email at iaf.fraunhofer.de
Title
Cited by
Cited by
Year
Cleaning process and operating process for a cvd reactor
S Leone, M Mauceri, G Abbondanza, D Crippa, G Valente, M Masi, F Preti
4372006
Chloride-based CVD growth of silicon carbide for electronic applications
H Pedersen, S Leone, O Kordina, A Henry, S Nishizawa, Y Koshka, ...
Chemical reviews 112 (4), 2434-2453, 2012
1272012
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
H Pedersen, S Leone, A Henry, FC Beyer, V Darakchieva, E Janzén
Journal of crystal growth 307 (2), 334-340, 2007
1162007
4H SiC epitaxial growth with chlorine addition
F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ...
Chemical vapor deposition 12 (8‐9), 509-515, 2006
1102006
Metal‐organic chemical vapor deposition of aluminum scandium nitride
S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ...
physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020
772020
Toward an ideal Schottky barrier on 3C-SiC
J Eriksson, MH Weng, F Roccaforte, F Giannazzo, S Leone, V Raineri
Applied Physics Letters 95 (8), 2009
632009
Improved morphology for epitaxial growth on 4 off-axis 4H-SiC substrates
S Leone, H Pedersen, A Henry, O Kordina, E Janzén
Journal of Crystal Growth 311 (12), 3265-3272, 2009
632009
D-band and G-band high-performance GaN power amplifier MMICs
M Ćwikliński, P Brückner, S Leone, C Friesicke, H Maßler, R Lozar, ...
IEEE Transactions on Microwave Theory and Techniques 67 (12), 5080-5089, 2019
542019
Thick homoepitaxial layers grown on on-axis Si-face 6H-and 4H-SiC substrates with HCl addition
S Leone, H Pedersen, A Henry, O Kordina, E Janzén
Journal of crystal growth 312 (1), 24-32, 2009
482009
Modeling of epitaxial silicon carbide deposition
A Veneroni, F Omarini, D Moscatelli, M Masi, S Leone, M Mauceri, ...
Journal of Crystal Growth 275 (1-2), e295-e300, 2005
412005
Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
J Ligl, S Leone, C Manz, L Kirste, P Doering, T Fuchs, M Prescher, ...
Journal of Applied Physics 127 (19), 2020
402020
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
C Manz, S Leone, L Kirste, J Ligl, K Frei, T Fuchs, M Prescher, P Waltereit, ...
Semiconductor Science and Technology 36 (3), 034003, 2021
392021
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
S Leone, R Fornari, M Bosi, V Montedoro, L Kirste, P Doering, ...
Journal of Crystal Growth 534, 125511, 2020
392020
Growth characteristics of chloride‐based SiC epitaxial growth
H Pedersen, S Leone, A Henry, A Lundskog, E Janzén
physica status solidi (RRL)–Rapid Research Letters 2 (6), 278-280, 2008
392008
Effect of different carbon doping techniques on the dynamic properties of GaN-on-Si buffers
H Yacoub, C Mauder, S Leone, M Eickelkamp, D Fahle, M Heuken, ...
IEEE Transactions on Electron Devices 64 (3), 991-997, 2017
382017
Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS)
H Pedersen, S Leone, A Henry, V Darakchieva, P Carlsson, A Gällström, ...
physica status solidi (RRL)–Rapid Research Letters 2 (4), 188-190, 2008
362008
Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
O Ambacher, B Christian, M Yassine, M Baeumler, S Leone, R Quay
Journal of Applied Physics 129 (20), 2021
352021
Suppression of iron memory effect in GaN epitaxial layers
S Leone, F Benkhelifa, L Kirste, C Manz, S Mueller, R Quay, ...
physica status solidi (b) 255 (5), 1700377, 2018
352018
High growth rate of 4H-SiC epilayers on on-axis substrates with different chlorinated precursors
S Leone, FC Beyer, H Pedersen, O Kordina, A Henry, E Janzén
Crystal growth & design 10 (12), 5334-5340, 2010
302010
A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
F Thome, P Brückner, S Leone, R Quay
IEEE Transactions on Microwave Theory and Techniques 70 (2), 1367-1376, 2021
282021
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