wenyuan sun
wenyuan sun
Unknown affiliation
Verified email at
Cited by
Cited by
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm
S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ...
IEEE Electron Device Letters 39 (2), 256-259, 2017
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ...
Journal of Applied Physics 118 (15), 2015
Investigation of trap-induced threshold voltage instability in GaN-on-Si MISHEMTs
W Sun, J Joh, S Krishnan, S Pendharkar, CM Jackson, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (2), 890-895, 2019
Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs
A Sasikumar, AR Arehart, DW Cardwell, CM Jackson, W Sun, Z Zhang, ...
Microelectronics Reliability 56, 37-44, 2016
Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing
W Sun, C Lee, P Saunier, SA Ringel, AR Arehart
2016 IEEE International Reliability Physics Symposium (IRPS), CD-3-1-CD-3-6, 2016
Impact of traps on the adjacent channel power ratios of GaN HEMTs
W Sun, JL Jimenez, AR Arehart
IEEE Electron Device Letters 41 (6), 816-819, 2020
General model for irradiation-induced degradation of GaN HEMTs
W Sun, Z Zhang, T Mohsin, E Farzana, B McSkimming, C Lee, P Saunier, ...
ROCS. Indian Wells, CA, USA, 2017
Impact of As-grown and Radiation-induced Traps on GaN RF and Power Transistor Performance and Reliability
W Sun
The Ohio State University, 2020
EC-0.90 eV Trap-Induced Threshold Voltage Instability in GaN/Si MISHEMTs
W Sun, SA Ringel, AR Arehart
The system can't perform the operation now. Try again later.
Articles 1–11