Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators D Ritter, E Zeldov, K Weiser
Applied physics letters 49 (13), 791-793, 1986
226 1986 Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs D Ritter, K Weiser, E Zeldov
Journal of applied physics 62 (11), 4563-4570, 1987
200 1987 A CMOS bidirectional 32-element phased-array transceiver at 60 GHz with LTCC antenna E Cohen, M Ruberto, M Cohen, O Degani, S Ravid, D Ritter
IEEE Transactions on Microwave Theory and Techniques 61 (3), 1359-1375, 2013
167 2013 InGaAs/InP long wavelength quantum well infrared photodetectors SD Gunapala, BF Levine, D Ritter, R Hamm, MB Panish
Applied physics letters 58 (18), 2024-2026, 1991
147 1991 Formation of InAs self-assembled quantum rings on InP T Raz, D Ritter, G Bahir
Applied physics letters 82 (11), 1706-1708, 2003
138 2003 Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique D Ritter, E Zeldov, K Weiser
Physical Review B 38 (12), 8296, 1988
137 1988 Suppression of interference fringes in absorption measurements on thin films D Ritter, K Weiser
Optics Communications 57 (5), 336-338, 1986
124 1986 A bidirectional TX/RX four-element phased array at 60 GHz with RF-IF conversion block in 90-nm CMOS process E Cohen, C Jakobson, S Ravid, D Ritter
IEEE Transactions on Microwave Theory and Techniques 58 (5), 1438-1446, 2010
97 2010 An ultra low power LNA with 15dB gain and 4.4 db NF in 90nm CMOS process for 60 GHz phase array radio E Cohen, S Ravid, D Ritter
2008 IEEE Radio Frequency Integrated Circuits Symposium, 61-64, 2008
95 2008 Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit SJ Spiegel, D Ritter, RA Hamm, A Feygenson, PR Smith
IEEE transactions on electron devices 42 (6), 1059-1064, 1995
91 1995 Compact metalorganic molecular‐beam epitaxy growth system RA Hamm, D Ritter, H Temkin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (5 …, 1994
87 1994 Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated V Mikhaelashvili, Y Betzer, I Prudnikov, M Orenstein, D Ritter, ...
Journal of applied physics 84 (12), 6747-6752, 1998
86 1998 Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47 In0.53 As heterojunction bipolar transistors D Ritter, RA Hamm, A Feygenson, MB Panish
Applied physics letters 60 (25), 3150-3152, 1992
83 1992 Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors SD Gunapala, BF Levine, D Ritter, RA Hamm, MB Panish
Applied physics letters 60 (5), 636-638, 1992
83 1992 On the extraction of linear and nonlinear physical parameters in nonideal diodes V Mikhelashvili, G Eisenstein, V Garber, S Fainleib, G Bahir, D Ritter, ...
Journal of Applied Physics 85 (9), 6873-6883, 1999
78 1999 A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors S Chandrasekhar, LM Lunardi, AH Gnauck, GJ Qua, D Ritter, RA Hamm, ...
Electronics letters 28 (5), 466-468, 1992
70 1992 Diffusive base transport in narrow base InP/Ga0.47 In0.53 As heterojunction bipolar transistors D Ritter, RA Hamm, A Feygenson, MB Panish, S Chandrasekhar
Applied physics letters 59 (26), 3431-3433, 1991
67 1991 A thirty two element phased-array transceiver at 60GHz with RF-IF conversion block in 90nm flip chip CMOS process E Cohen, C Jakobson, S Ravid, D Ritter
2010 IEEE Radio Frequency Integrated Circuits Symposium, 457-460, 2010
65 2010 Metalorganic molecular beam epitaxy of InP, Ga0.47 In0.53 As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine D Ritter, MB Panish, RA Hamm, D Gershoni, I Brener
Applied physics letters 56 (15), 1448-1450, 1990
63 1990 A peeling algorithm for extraction of the HBT small-signal equivalent circuit B Sheinman, E Wasige, M Rudolph, R Doerner, V Sidorov, S Cohen, ...
IEEE transactions on microwave theory and techniques 50 (12), 2804-2810, 2002
57 2002 
Igor KrylovTechnion-Israel Institute of TechnologyVerified email at technion.ac.il
