Siddharth Rajan

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Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
Umesh MishraUCSBVerified email at ece.ucsb.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityVerified email at osu.edu
Digbijoy NathAssociate Professor at Indian Institute of ScienceVerified email at iisc.ac.in
Yuewei ZhangUCSBVerified email at ucsb.edu
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
Fatih AkyolYıldız Teknik ÜniversitesiVerified email at yildiz.edu.tr
Sanyam BajajIntel CorporationVerified email at intel.com
PIL SUNG PARKTechnology Development Center, Samsung ElectronicsVerified email at osu.edu
Stacia KellerUniversity of California Santa BarbaraVerified email at ece.ucsb.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
Steven RingelThe Ohio State UniversityVerified email at osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerified email at osu.edu
Chandan JoishiPost Doctoral Researcher, ECE, The Ohio State UniversityVerified email at osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Wu Lu, ProfessorThe Ohio State UniversityVerified email at osu.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityVerified email at asu.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityVerified email at osu.edu
Jared M JohnsonThe Ohio State UniversityVerified email at thermofisher.com
Shahadat Hasan SohelIntelVerified email at intel.com

Siddharth Rajan

Electrical and Computer Engineering, Ohio State University

Verified email at ece.osu.edu - Homepage

semiconductors semiconductor devices


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Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	907	2018
High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005	563	2005
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018	561	2018
p-type doping of MoS₂ thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 092104, 2014	321	2014
Demonstration of high mobility and quantum transport in modulation-doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 173502, 2018	315	2018
Electrostatic carrier doping of GdTiO₃/SrTiO₃ interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 232116, 2011	298	2011
Modulation-doped β-(Al_0.2Ga_0.8)₂O₃/Ga₂O₃ field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 023502, 2017	271	2017
N-polar high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 044501, 2007	266	2007
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	260	2020
Large area single crystal (0001) oriented MoS₂ MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 252108, 2013	254	2013
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005	226	2005
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	223	2004
N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013	215	2013
High responsivity in molecular beam epitaxy grown β-Ga₂O₃ metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 221107, 2017	210	2017
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 133503, 2011	188	2011
Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018	187	2018
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 203502, 2010	183	2010
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems M Su, C Chen, S Rajan Semiconductor Science and Technology 28 (7), 074012, 2013	178	2013
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 111118, 2012	162	2012
Delta-doped β-gallium oxide field-effect transistor S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan Applied Physics Express 10 (5), 051102, 2017	157	2017

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