Siddharth Rajan

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Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityVerified email at osu.edu
Umesh MishraUCSBVerified email at ece.ucsb.edu
Digbijoy NathAssociate Professor at Indian Institute of ScienceVerified email at iisc.ac.in
Yuewei ZhangUCSBVerified email at ucsb.edu
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
Chandan JoishiResearch Scientist, The Ohio State UniversityVerified email at osu.edu
Fatih AkyolYıldız Teknik ÜniversitesiVerified email at yildiz.edu.tr
Sanyam BajajIntel CorporationVerified email at intel.com
PIL SUNG PARKTechnology Development Center, Samsung ElectronicsVerified email at osu.edu
Steven RingelThe Ohio State UniversityVerified email at osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityVerified email at osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Stacia KellerUniversity of California Santa BarbaraVerified email at ece.ucsb.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraVerified email at engineering.ucsb.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityVerified email at asu.edu
Wu Lu, ProfessorThe Ohio State UniversityVerified email at osu.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityVerified email at osu.edu
Shahadat Hasan SohelIntelVerified email at intel.com
Roberto C. MyersProfessor of Materials Science, Electrical Engineering, and Physics, The Ohio State UniversityVerified email at osu.edu

Siddharth Rajan

Electrical and Computer Engineering, Ohio State University

Verified email at ece.osu.edu - Homepage

semiconductors semiconductor devices


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Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	1359	2018
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018	746	2018
High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005	605	2005
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	452	2020
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	403	2018
p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 2014	356	2014
β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022	329	2022
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	327	2017
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 2011	319	2011
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 2007	293	2007
Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013	275	2013
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 2017	268	2017
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005	259	2005
N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013	254	2013
Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018	249	2018
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	234	2004
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011	207	2011
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems M Su, C Chen, S Rajan Semiconductor Science and Technology 28 (7), 074012, 2013	203	2013
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010	197	2010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012	186	2012

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