| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 695 | 2018 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron Device Letters 26 (11), 781-783, 2005 | 535 | 2005 |
| Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018 | 461 | 2018 |
| p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 092104, 2014 | 305 | 2014 |
| Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 232116, 2011 | 288 | 2011 |
| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 173502, 2018 | 257 | 2018 |
| N-polar high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 044501, 2007 | 242 | 2007 |
| Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 252108, 2013 | 241 | 2013 |
| Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 023502, 2017 | 227 | 2017 |
| Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005 | 216 | 2005 |
| Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 214 | 2004 |
| Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 133503, 2011 | 182 | 2011 |
| High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 221107, 2017 | 181 | 2017 |
| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 179 | 2013 |
| Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 203502, 2010 | 170 | 2010 |
| Prospects for the application of GaN power devices in hybrid electric vehicle drive systems M Su, C Chen, S Rajan Semiconductor Science and Technology 28 (7), 074012, 2013 | 158 | 2013 |
| Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 111118, 2012 | 151 | 2012 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 147 | 2020 |
| Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018 | 135 | 2018 |
| Low resistance GaN/InGaN/GaN tunnel junctions S Krishnamoorthy, F Akyol, PS Park, S Rajan Applied Physics Letters 102 (11), 113503, 2013 | 135 | 2013 |
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
