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Masataka Higashiwaki
Masataka Higashiwaki
Osaka Metropolitan University | National Institute of Information and Communications Technology
Verified email at omu.ac.jp
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substrates
M Higashiwaki, K Sasaki, A Kuramata, T Masui, S Yamakoshi
Applied Physics Letters 100 (1), 013504, 2012
14552012
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
8302018
Recent progress in Ga2O3 power devices
M Higashiwaki, K Sasaki, H Murakami, Y Kumagai, A Koukitu, A Kuramata, ...
Semiconductor Science and Technology 31 (3), 034001, 2016
8212016
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device …
M Higashiwaki, K Sasaki, T Kamimura, M Hoi Wong, D Krishnamurthy, ...
Applied Physics Letters 103 (12), 123511, 2013
6132013
Guest Editorial: The dawn of gallium oxide microelectronics
M Higashiwaki, GH Jessen
Applied Physics Letters 112 (6), 060401, 2018
5002018
Development of gallium oxide power devices
M Higashiwaki, K Sasaki, A Kuramata, T Masui, S Yamakoshi
physica status solidi (a) 211 (1), 21-26, 2014
4662014
Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
IEEE Electron Device Letters 37 (2), 212-215, 2015
4652015
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
K Konishi, K Goto, H Murakami, Y Kumagai, A Kuramata, S Yamakoshi, ...
Applied Physics Letters 110 (10), 103506, 2017
4102017
Schottky Barrier Diodes Fabricated by Using Single-Crystal (010) Substrates
K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi
IEEE electron device letters 34 (4), 493-495, 2013
3652013
Anisotropic thermal conductivity in single crystal β-gallium oxide
Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ...
Applied Physics Letters 106 (11), 111909, 2015
3622015
Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
H Murakami, K Nomura, K Goto, K Sasaki, K Kawara, QT Thieu, ...
Applied Physics Express 8 (1), 015503, 2014
3162014
Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts
K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi
Applied Physics Express 6 (8), 086502, 2013
3012013
Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
T Onuma, S Fujioka, T Yamaguchi, M Higashiwaki, K Sasaki, T Masui, ...
Applied Physics Letters 103 (4), 041910, 2013
2852013
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n–Ga2O3 drift …
M Higashiwaki, K Konishi, K Sasaki, K Goto, K Nomura, QT Thieu, ...
Applied Physics Letters 108 (13), 133503, 2016
2762016
MBE grown Ga2O3 and its power device applications
K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi
Journal of Crystal Growth 378, 591-595, 2013
2712013
Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
T Onuma, S Saito, K Sasaki, T Masui, T Yamaguchi, T Honda, ...
Japanese Journal of Applied Physics 54 (11), 112601, 2015
2452015
State-of-the-art technologies of gallium oxide power devices
M Higashiwaki, A Kuramata, H Murakami, Y Kumagai
Journal of Physics D: Applied Physics 50 (33), 333002, 2017
2072017
Current status of Ga2O3 power devices
M Higashiwaki, H Murakami, Y Kumagai, A Kuramata
Japanese Journal of Applied Physics 55 (12), 1202A1, 2016
2072016
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
T Kamimura, K Sasaki, M Hoi Wong, D Krishnamurthy, A Kuramata, ...
Applied Physics Letters 104 (19), 192104, 2014
1802014
AlGaN/GaN heterostructure field-effect transistors on 4H-SiC substrates with current-gain cutoff frequency of 190 GHz
M Higashiwaki, T Mimura, T Matsui
Applied Physics Express 1 (2), 021103, 2008
1602008
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