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Patricia Mooney
Patricia Mooney
Professor Emerita of Physics, Simon Fraser University
Verified email at sfu.ca
Title
Cited by
Cited by
Year
Deep donor levels (DX centers) in III‐V semiconductors
PM Mooney
Journal of Applied Physics 67 (3), R1-R26, 1990
10821990
Measurements of alloy composition and strain in thin GexSi1−x layers
JC Tsang, PM Mooney, F Dacol, JO Chu
Journal of applied physics 75 (12), 8098-8108, 1994
5601994
High performance CMOS fabricated on hybrid substrate with different crystal orientations
M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ...
IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003
3762003
Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs
K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
3672002
Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons
PM Mooney, LJ Cheng, M Süli, JD Gerson, JW Corbett
Physical Review B 15 (8), 3836, 1977
3601977
Strained Si NMOSFETs for high performance CMOS technology
K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ...
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001
3152001
Controllable valley splitting in silicon quantum devices
S Goswami, KA Slinker, M Friesen, LM McGuire, JL Truitt, C Tahan, ...
Nature Physics 3 (1), 41-45, 2007
3122007
High speed composite p-channel Si/SiGe heterostructure for field effect devices
JO Chu, R Hammond, KEE Ismail, SJ Koester, PM Mooney, JA Ott
US Patent 6,350,993, 2002
2722002
Influence of misfit dislocations on the surface morphology of Si1−xGex films
MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu
Applied Physics Letters 66 (6), 724-726, 1995
2371995
Electron Localization by a Metastable Donor Level in n− GaAs: A New Mechanism Limiting the Free-Carrier Density
TN Theis, PM Mooney, SL Wright
Physical review letters 60 (4), 361, 1988
2171988
Energy dependence of deep level introduction in electron irradiated GaAs
D Pons, PM Mooney, JC Bourgoin
Journal of Applied Physics 51 (4), 2038-2042, 1980
2071980
Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ...
Journal of applied physics 62 (2), 632-643, 1987
1871987
Raman scattering analysis of relaxed GexSi1−x alloy layers
PM Mooney, FH Dacol, JC Tsang, JO Chu
Applied Physics Letters 62 (17), 2069-2071, 1993
1791993
Strain relaxation and dislocations in SiGe/Si structures
PM Mooney
Materials Science and Engineering: R: Reports 17 (3), 105-146, 1996
1771996
The capture barrier of the DX center in Si‐doped AlxGa1−xAs
PM Mooney, NS Caswell, SL Wright
Journal of applied physics 62 (12), 4786-4797, 1987
1731987
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
K Ismail, FK LeGoues, KL Saenger, M Arafa, JO Chu, PM Mooney, ...
Physical review letters 73 (25), 3447, 1994
1681994
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
SH Christiansen, JO Chu, A Grill, PM Mooney
US Patent 6,593,625, 2003
1622003
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
SH Christiansen, A Grill, PM Mooney
US Patent 6,515,335, 2003
1492003
Evidence for large lattice relaxation at the DX center in Si-doped Al x Ga 1− x As
PM Mooney, GA Northrop, TN Morgan, HG Grimmeiss
Physical Review B 37 (14), 8298, 1988
1361988
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
SH Christiansen, JO Chu, A Grill, PM Mooney
US Patent 6,855,649, 2005
1332005
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