Follow
Pengyu Long
Pengyu Long
Intel
No verified email
Title
Cited by
Cited by
Year
High-Current Tunneling FETs With () Orientation and a Channel Heterojunction
P Long, JZ Huang, M Povolotskyi, G Klimeck, MJW Rodwell
IEEE Electron Device Letters 37 (3), 345-348, 2016
332016
Design and simulation of GaSb/InAs 2D transmission-enhanced tunneling FETs
P Long, E Wilson, JZ Huang, G Klimeck, MJW Rodwell, M Povolotskyi
IEEE Electron Device Letters 37 (1), 107-110, 2015
272015
P-type tunnel FETs with triple heterojunctions
JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell
IEEE Journal of the Electron Devices Society 4 (6), 410-415, 2016
242016
A multiscale modeling of triple-heterojunction tunneling FETs
JZ Huang, P Long, M Povolotskyi, H Ilatikhameneh, TA Ameen, ...
IEEE Transactions on Electron Devices 64 (6), 2728-2735, 2017
222017
Scalable GaSb/InAs tunnel FETs with nonuniform body thickness
JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell
IEEE Transactions on Electron Devices 64 (1), 96-101, 2016
212016
Quantum Transport Simulation of III-V TFETs with Reduced-Order k ⋅ p kˇ p Method
JZ Huang, L Zhang, P Long, M Povolotskyi, G Klimeck
Tunneling Field Effect Transistor Technology, 151-180, 2016
182016
Phonon properties and low thermal conductivity of phase change material with superlattice-like structure
P Long, H Tong, X Miao
Applied physics express 5 (3), 031201, 2012
182012
Design and simulation of two-dimensional superlattice steep transistors
P Long, M Povolotskyi, B Novakovic, T Kubis, G Klimeck, MJW Rodwell
IEEE Electron Device Letters 35 (12), 1212-1214, 2014
162014
High-current InP-based triple heterojunction tunnel transistors
P Long, JZ Huang, M Povolotskyi, D Verreck, G Klimeck, MJW Rodwell
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
152016
A tunnel FET design for high-current, 120 mV operation
P Long, JZ Huang, M Povolotskyi, D Verreck, J Charles, T Kubis, ...
2016 IEEE International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2016
142016
Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors
P Long, JZ Huang, M Povolotskyi, P Sarangapani, GA Valencia-Zapata, ...
Journal of Applied Physics 123 (17), 2018
82018
A high-current InP-channel triple heterojunction tunnel transistor design
P Long, M Povolotskyi, JZ Huang, J Charles, T Kubis, G Klimeck, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
82017
Performance degradation of superlattice MOSFETs due to scattering in the contacts
P Long, JZ Huang, Z Jiang, G Klimeck, MJW Rodwell, M Povolotskyi
Journal of Applied Physics 120 (22), 2016
82016
Atomistic simulation of phonon and alloy limited hole mobility in Si1–xGex nanowires
S Mehrotra, P Long, M Povolotskyi, G Klimeck
physica status solidi (RRL)–Rapid Research Letters 7 (10), 903-906, 2013
82013
Sb-and Al-Free ultra-high-current tunnel FET designs
JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep …, 2017
72017
Transistors for VLSI, for wireless: A view forwards through fog
MJW Rodwell, CY Huang, J Rode, P Choudhary, S Lee, AC Gossard, ...
2015 73rd Annual Device Research Conference (DRC), 19-20, 2015
52015
Exploring channel doping designs for high-performance tunneling FETs
JZ Huang, P Long, M Povolotskyi, MJW Rodwell, G Klimeck
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
32016
High-performance complementary III-V Tunnel FETs with strain engineering
JZ Huang, Y Wang, P Long, Y Tan, M Povolotskyi, G Klimeck
arXiv preprint arXiv:1605.00955, 2016
22016
Comparison of ultra-thin InAs and InGaAs quantum wells and ultra-thin-body surface-channel MOSFETs
CY Huang, S Lee, E Wilson, P Long, M Povolotskyi, V Chobpattana, ...
Proc. Int. Conf. Indium Phosphide Related Mater.(IPRM), 1-4, 2012
22012
Multiscale transport simulation of nanoelectronic devices with NEMO5
JZ Huang, P Long, H Ilatikhameneh, T Ameen, R Rahman, M Povolotskyi, ...
2016 Progress in Electromagnetic Research Symposium (PIERS), 914-914, 2016
12016
The system can't perform the operation now. Try again later.
Articles 1–20