| High-Current Tunneling FETs With () Orientation and a Channel Heterojunction P Long, JZ Huang, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Electron Device Letters 37 (3), 345-348, 2016 | 34 | 2016 |
| Design and simulation of GaSb/InAs 2D transmission-enhanced tunneling FETs P Long, E Wilson, JZ Huang, G Klimeck, MJW Rodwell, M Povolotskyi IEEE Electron Device Letters 37 (1), 107-110, 2015 | 27 | 2015 |
| P-type tunnel FETs with triple heterojunctions JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Journal of the Electron Devices Society 4 (6), 410-415, 2016 | 24 | 2016 |
| A multiscale modeling of triple-heterojunction tunneling FETs JZ Huang, P Long, M Povolotskyi, H Ilatikhameneh, TA Ameen, ... IEEE Transactions on Electron Devices 64 (6), 2728-2735, 2017 | 23 | 2017 |
| Scalable GaSb/InAs tunnel FETs with nonuniform body thickness JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell IEEE Transactions on Electron Devices 64 (1), 96-101, 2016 | 21 | 2016 |
| Quantum Transport Simulation of III-V TFETs with Reduced-Order k ⋅ p kˇ p Method JZ Huang, L Zhang, P Long, M Povolotskyi, G Klimeck Tunneling Field Effect Transistor Technology, 151-180, 2016 | 18 | 2016 |
| Phonon properties and low thermal conductivity of phase change material with superlattice-like structure P Long, H Tong, X Miao Applied physics express 5 (3), 031201, 2012 | 17 | 2012 |
| High-current InP-based triple heterojunction tunnel transistors P Long, JZ Huang, M Povolotskyi, D Verreck, G Klimeck, MJW Rodwell 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 16 | 2016 |
| Design and simulation of two-dimensional superlattice steep transistors P Long, M Povolotskyi, B Novakovic, T Kubis, G Klimeck, MJW Rodwell IEEE Electron Device Letters 35 (12), 1212-1214, 2014 | 16 | 2014 |
| A tunnel FET design for high-current, 120 mV operation P Long, JZ Huang, M Povolotskyi, D Verreck, J Charles, T Kubis, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2016 | 14 | 2016 |
| Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors P Long, JZ Huang, M Povolotskyi, P Sarangapani, GA Valencia-Zapata, ... Journal of Applied Physics 123 (17), 2018 | 8 | 2018 |
| Sb-and Al-Free ultra-high-current tunnel FET designs JZ Huang, P Long, M Povolotskyi, G Klimeck, MJW Rodwell 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep …, 2017 | 8 | 2017 |
| A high-current InP-channel triple heterojunction tunnel transistor design P Long, M Povolotskyi, JZ Huang, J Charles, T Kubis, G Klimeck, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 8 | 2017 |
| Performance degradation of superlattice MOSFETs due to scattering in the contacts P Long, JZ Huang, Z Jiang, G Klimeck, MJW Rodwell, M Povolotskyi Journal of Applied Physics 120 (22), 2016 | 8 | 2016 |
| Atomistic simulation of phonon and alloy limited hole mobility in Si1–xGex nanowires S Mehrotra, P Long, M Povolotskyi, G Klimeck physica status solidi (RRL)–Rapid Research Letters 7 (10), 903-906, 2013 | 8 | 2013 |
| Transistors for VLSI, for wireless: A view forwards through fog MJW Rodwell, CY Huang, J Rode, P Choudhary, S Lee, AC Gossard, ... 2015 73rd Annual Device Research Conference (DRC), 19-20, 2015 | 5 | 2015 |
| Exploring channel doping designs for high-performance tunneling FETs JZ Huang, P Long, M Povolotskyi, MJW Rodwell, G Klimeck 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 3 | 2016 |
| Multiscale transport simulation of nanoelectronic devices with NEMO5 JZ Huang, P Long, H Ilatikhameneh, T Ameen, R Rahman, M Povolotskyi, ... 2016 Progress in Electromagnetic Research Symposium (PIERS), 914-914, 2016 | 2 | 2016 |
| High-performance complementary III-V Tunnel FETs with strain engineering JZ Huang, Y Wang, P Long, Y Tan, M Povolotskyi, G Klimeck arXiv preprint arXiv:1605.00955, 2016 | 2 | 2016 |
| Comparison of ultra-thin InAs and InGaAs quantum wells and ultra-thin-body surface-channel MOSFETs CY Huang, S Lee, E Wilson, P Long, M Povolotskyi, V Chobpattana, ... Proc. Int. Conf. Indium Phosphide Related Mater.(IPRM), 1-4, 2012 | 2 | 2012 |
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
