Rajib Rahman

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Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Hesameddin IlatikhamenehSamsung ResearchVerified email at samsung.com
Sven RoggeProfessor of Physics, University of New South WalesVerified email at unsw.edu.au
Tarek AmeenComponent Design Engineer at IntelVerified email at intel.com
Joe SalfiAssistant Professor, University of British Columbia.Verified email at ece.ubc.ca
Andrea MorelloScientia Professor of Quantum Engineering, University of New South WalesVerified email at unsw.edu.au
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Harshad SahasrabudheThe MathWorks, Inc.Verified email at mathworks.com
Malcolm CarrollInternational Business MachinesVerified email at ibm.com
Fan ChenSamsungVerified email at purdue.edu
Fahd A. MohiyaddinResearch Scientist, IntelVerified email at intel.com
Muhammad UsmanCSIRO's Data61 and The University of Melbourne, AustraliaVerified email at alumni.purdue.edu
Archana TankasalaPurdue UniversityVerified email at purdue.edu
Rick MullerSandia National LaboratoriesVerified email at sandia.gov
Bent WeberNanyang Technological UniversityVerified email at ntu.edu.sg
Benoit VoisinResearch fellow, CQC2T, University of New South Wales, Sydney, AustraliaVerified email at unsw.edu.au
Andrew DzurakScientia Professor in Electrical Engineering, UNSWVerified email at unsw.edu.au
Hoon Ryu (류훈)Korea Institute of Science and Technology Information (KISTI)Verified email at kisti.re.kr
Yu WangPurdue UniversityVerified email at purdue.edu
Yaohua TanUniversity of VirginiaVerified email at purdue.edu

Rajib Rahman

Associate Professor of Physics, University of New South Wales

Verified email at unsw.edu.au - Homepage

Quantum Computing Quantum Dots 2D Materials Nanoelectronics Condensed Matter Physics


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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ... Nature Physics 4 (8), 656-661, 2008	433	2008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ... IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007	286	2007
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015	219	2015
Electrically Tunable Bandgaps in Bilayer MoS₂ T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen Nano letters 15 (12), 8000-8007, 2015	193	2015
Silicon quantum processor with robust long-distance qubit couplings G Tosi, FA Mohiyaddin, V Schmitt, S Tenberg, R Rahman, G Klimeck, ... Nature communications 8 (1), 450, 2017	185	2017
Electrically controlling single-spin qubits in a continuous microwave field A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra, JP Dehollain, S Freer, ... Science advances 1 (3), e1500022, 2015	173	2015
High precision quantum control of single donor spins in silicon R Rahman, CJ Wellard, FR Bradbury, M Prada, JH Cole, G Klimeck, ... Physical review letters 99 (3), 036403, 2007	159	2007
Spin blockade and exchange in Coulomb-confined silicon double quantum dots B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ... Nature nanotechnology 9 (6), 430-435, 2014	156	2014
Spin readout and addressability of phosphorus-donor clusters in silicon H Büch, S Mahapatra, R Rahman, A Morello, MY Simmons Nature communications 4 (1), 2017, 2013	145	2013
Few-layer phosphorene: An ideal 2D material for tunnel transistors TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman Scientific reports 6 (1), 28515, 2016	115	2016
Spatially resolving valley quantum interference of a donor in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature materials 13 (6), 605-610, 2014	115	2014
Quantum simulation of the Hubbard model with dopant atoms in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature communications 7 (1), 11342, 2016	103	2016
Dielectric engineered tunnel field-effect transistor H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman IEEE Electron Device Letters 36 (10), 1097-1100, 2015	103	2015
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015	99	2015
Orbital Stark effect and quantum confinement transition of donors in silicon R Rahman, GP Lansbergen, SH Park, J Verduijn, G Klimeck, S Rogge, ... Physical Review B 80 (16), 165314, 2009	95	2009
Aharonov–Bohm interference of fractional quantum Hall edge modes J Nakamura, S Fallahi, H Sahasrabudhe, R Rahman, S Liang, ... Nature Physics 15 (6), 563-569, 2019	92	2019
Saving Moore’s law down to 1 nm channels with anisotropic effective mass H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman Scientific reports 6 (1), 31501, 2016	88	2016
Complementary black phosphorus tunneling field-effect transistors P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ... ACS nano 13 (1), 377-385, 2018	84	2018
Atomically engineered electron spin lifetimes of 30 s in silicon TF Watson, B Weber, YL Hsueh, LCL Hollenberg, R Rahman, ... Science advances 3 (3), e1602811, 2017	80	2017
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS₂ Heterostructures C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ... ACS nano 11 (3), 2785-2793, 2017	80	2017

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