Guy Brammertz
Guy Brammertz
Principal Scientist, imec-imomec
Adresse e-mail validée de imec.be - Page d'accueil
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On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4052008
Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells
G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...
Applied Physics Letters 103 (16), 163904, 2013
2212013
Capacitance-voltage characterization of interfaces
G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 183504, 2008
1312008
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied physics letters 91 (13), 133510, 2007
1272007
Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods
É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 102902, 2009
1192009
On the interface state density at /oxide interfaces
G Brammertz, HC Lin, M Caymax, M Meuris, M Heyns, M Passlack
Applied Physics Letters 95 (20), 202109, 2009
1142009
High quality Ge virtual substrates on Si wafers with standard STI patterning
R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax
Journal of The Electrochemical Society 157 (1), H13, 2009
1132009
Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns
Microelectronic Engineering 86 (7-9), 1554-1557, 2009
1122009
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied toand InP Capacitors
G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang
IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011
1042011
Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
G Brammertz, Y Mols, S Degroote, V Motsnyi, M Leys, G Borghs, ...
Journal of applied physics 99 (9), 093514, 2006
852006
Capacitance–voltage characterization of GaAs–oxide interfaces
G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...
Journal of the Electrochemical Society 155 (12), H945, 2008
812008
Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells
S Oueslati, G Brammertz, M Buffiere, H ElAnzeery, O Touayar, C Köble, ...
Thin Solid Films 582, 224-228, 2015
782015
Selective area growth of high quality InP on Si (001) substrates
G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ...
Applied Physics Letters 97 (12), 121913, 2010
732010
The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
HC Lin, G Brammertz, K Martens, G de Valicourt, L Negre, WE Wang, ...
Applied physics letters 94 (15), 153508, 2009
722009
High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step
W Qiu, M Buffiere, G Brammertz, UW Paetzold, L Froyen, P Heremans, ...
Organic electronics 26, 30-35, 2015
692015
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
692009
Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution
D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
662009
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
652013
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
642011
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
M Caymax, G Brammertz, A Delabie, S Sioncke, D Lin, M Scarrozza, ...
Microelectronic engineering 86 (7-9), 1529-1535, 2009
632009
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