On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
456 2008 Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...
Applied Physics Letters 103 (16), 2013
270 2013 Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied Physics Letters 91 (13), 2007
141 2007 Capacitance-voltage characterization of GaAs–Al2O3 interfaces G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 2008
137 2008 Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns
Microelectronic Engineering 86 (7-9), 1554-1557, 2009
136 2009 On the interface state density at In0. 53Ga0. 47As/oxide interfaces G Brammertz, HC Lin, M Caymax, M Meuris, M Heyns, M Passlack
Applied Physics Letters 95 (20), 2009
129 2009 Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
128 2009 A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang
IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011
121 2011 High quality Ge virtual substrates on Si wafers with standard STI patterning R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax
Journal of The Electrochemical Society 157 (1), H13, 2009
121 2009 High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step W Qiu, M Buffière, G Brammertz, UW Paetzold, L Froyen, P Heremans, ...
Organic electronics 26, 30-35, 2015
111 2015 Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates G Brammertz, Y Mols, S Degroote, V Motsnyi, M Leys, G Borghs, ...
Journal of applied physics 99 (9), 2006
99 2006 Selective area growth of high quality InP on Si (001) substrates G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ...
Applied Physics Letters 97 (12), 2010
89 2010 Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells S Oueslati, G Brammertz, M Buffiere, H ElAnzeery, O Touayar, C Köble, ...
Thin Solid Films 582, 224-228, 2015
88 2015 Border traps in Ge/III–V channel devices: Analysis and reliability aspects E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
88 2013 The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ...
Applied Physics Letters 94 (15), 2009
87 2009 Capacitance–voltage characterization of GaAs–oxide interfaces G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...
Journal of the Electrochemical Society 155 (12), H945, 2008
85 2008 KCN Chemical Etch for Interface Engineering in Cu2 ZnSnSe4 Solar Cells M Buffiere, G Brammertz, S Sahayaraj, M Batuk, S Khelifi, D Mangin, ...
ACS applied materials & interfaces 7 (27), 14690-14698, 2015
83 2015 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
83 2011 Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
83 2009 Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
76 2009 
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