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Antonella Poggi
Antonella Poggi
ricercatore CNR
Verified email at bo.imm.cnr.it
Title
Cited by
Cited by
Year
Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions
F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, ...
IEEE transactions on nuclear science 53 (3), 1557-1563, 2006
712006
Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET
F Moscatelli, A Poggi, S Solmi, R Nipoti
IEEE Transactions on Electron Devices 55 (4), 961-967, 2008
652008
Permeated porous silicon for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, A Tagliani, ...
Sensors and Actuators A: Physical 74 (1-3), 95-99, 1999
641999
Composition and structure of tin/vanadium oxide surfaces for chemical sensing applications
A Lavacchi, B Cortigiani, G Rovida, U Bardi, A Atrei, R Angelucci, L Dori, ...
Sensors and Actuators B: Chemical 71 (1-2), 123-126, 2000
442000
Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications
M Bosi, BE Watts, G Attolini, C Ferrari, C Frigeri, G Salviati, A Poggi, ...
Crystal growth & design 9 (11), 4852-4859, 2009
432009
Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, ...
Journal of Applied Physics 108 (2), 2010
372010
Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC
F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, R Nipoti
Semiconductor science and technology 18 (6), 554, 2003
352003
Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin-and thick-film gas sensors
P Maccagnani, R Angelucci, P Pozzi, A Poggi, L Dori, GC Cardinali, ...
Sensors and Actuators B: Chemical 49 (1-2), 22-29, 1998
351998
Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions
A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera
Applied physics letters 88 (16), 2006
342006
Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs
A Poggi, F Moscatelli, S Solmi, R Nipoti
IEEE transactions on electron devices 55 (8), 2021-2028, 2008
322008
Porous silicon layer permeated with Sn–V mixed oxides for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, G Pizzochero, ...
Thin solid films 297 (1-2), 43-47, 1997
321997
Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors
F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
312005
TEM characterisation of porous silicon
A Parisini, R Angelucci, L Dori, A Poggi, P Maccagnani, GC Cardinali, ...
Micron 31 (3), 223-230, 2000
312000
Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel
A Poggi, F Moscatelli, S Solmi, A Armigliato, L Belsito, R Nipoti
Journal of Applied Physics 107 (4), 2010
302010
MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen
A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti
Microelectronic Engineering 84 (12), 2804-2809, 2007
302007
Permeated porous silicon suspended membrane as sub-ppm benzene sensor for air quality monitoring
R Angelucci, A Poggi, L Dori, A Tagliani, GC Cardinali, F Corticelli, ...
Journal of porous materials 7, 197-200, 2000
272000
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC.
R Nipoti, F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, M Lazar, ...
MRS Online Proceedings Library (OPL) 742, K6. 2, 2002
262002
Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography
S Mengali, N Liberatore, D Luciani, R Viola, GC Cardinali, I Elmi, A Poggi, ...
Quantum Sensing and Nanophotonic Devices X 8631, 489-498, 2013
242013
Low temperature oxidation of SiC preamorphized by ion implantation
A Poggi, R Nipoti, S Solmi, M Barozzi, L Vanzetti
Journal of applied physics 95 (11), 6119-6123, 2004
182004
Microstructural development in pure and V-doped SnO2 nanopowders
L Sangaletti, LE Depero, B Allieri, F Pioselli, R Angelucci, A Poggi, ...
Journal of the European Ceramic Society 19 (12), 2073-2077, 1999
181999
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