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Jinwoo Hwang
Jinwoo Hwang
Associate Professor, Materials Science and Engineering, Ohio State University
Verified email at osu.edu - Homepage
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Cited by
Year
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ...
Nature 544 (7650), 340-343, 2017
3542017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
2662018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
2372017
Nanoscale Structure and Structural Relaxation in Bulk Metallic Glass
J Hwang, ZH Melgarejo, YE Kalay, I Kalay, MJ Kramer, DS Stone, ...
Physical review letters 108 (19), 195505, 2012
1782012
Three-Dimensional Imaging of Individual Dopant Atoms in
J Hwang, JY Zhang, AJ D’Alfonso, LJ Allen, S Stemmer
Physical review letters 111 (26), 266101, 2013
1022013
Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films
Y Cheng, S Yu, M Zhu, J Hwang, F Yang
Physical Review Letters 124 (2), 027202, 2020
882020
Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO
P Moetakef, CA Jackson, J Hwang, L Balents, SJ Allen, S Stemmer
Physical Review B 86 (20), 201102, 2012
882012
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao
Applied Physics Letters 112 (5), 052104, 2018
852018
MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 120602, 2019
822019
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 141103, 2015
822015
Structural origins of the properties of rare earth nickelate superlattices
J Hwang, J Son, JY Zhang, A Janotti, CG Van de Walle, S Stemmer
Physical Review B 87 (6), 060101, 2013
782013
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
702019
Structural, optical, and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals
A Parra-Palomino, O Perales–Perez, R Singhal, M Tomar, J Hwang, ...
Journal of Applied Physics 103 (7), 07D121, 2008
682008
Symmetry lowering in extreme-electron-density perovskite quantum wells
JY Zhang, J Hwang, S Raghavan, S Stemmer
Physical review letters 110 (25), 256401, 2013
662013
Nanoscale quantification of octahedral tilts in perovskite films
J Hwang, JY Zhang, J Son, S Stemmer
Applied Physics Letters 100 (19), 191909, 2012
662012
Variable resolution fluctuation electron microscopy on Cu-Zr metallic glass using a wide range of coherent STEM probe size
J Hwang, PM Voyles
Microscopy and Microanalysis 17 (1), 67-74, 2011
622011
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 071107, 2018
592018
Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films
AJ Hauser, E Mikheev, NE Moreno, J Hwang, JY Zhang, S Stemmer
Applied Physics Letters 106 (9), 092104, 2015
592015
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ...
Journal of Applied Physics 121 (9), 094302, 2017
582017
High current density 2D/3D MoS2/GaN Esaki tunnel diodes
S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ...
Applied Physics Letters 109 (18), 183505, 2016
572016
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