Jinwoo Hwang
Jinwoo Hwang
Associate Professor, Materials Science and Engineering, Ohio State University
Verified email at - Homepage
Cited by
Cited by
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ...
Nature 544 (7650), 340-343, 2017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
Nanoscale Structure and Structural Relaxation in Bulk Metallic Glass
J Hwang, ZH Melgarejo, YE Kalay, I Kalay, MJ Kramer, DS Stone, ...
Physical review letters 108 (19), 195505, 2012
Tailoring binding abilities by incorporating oxophilic transition metals on 3D nanostructured Ni arrays for accelerated alkaline hydrogen evolution reaction
J Kim, H Jung, SM Jung, J Hwang, DY Kim, N Lee, KS Kim, H Kwon, ...
Journal of the American Chemical Society 143 (3), 1399-1408, 2020
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 2019
Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films
Y Cheng, S Yu, M Zhu, J Hwang, F Yang
Physical Review Letters 124 (2), 027202, 2020
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao
Applied Physics Letters 112 (5), 2018
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
Three-Dimensional Imaging of Individual Dopant Atoms in
J Hwang, JY Zhang, AJ D’Alfonso, LJ Allen, S Stemmer
Physical review letters 111 (26), 266101, 2013
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 2015
Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO
P Moetakef, CA Jackson, J Hwang, L Balents, SJ Allen, S Stemmer
Physical Review B 86 (20), 201102, 2012
Structural origins of the properties of rare earth nickelate superlattices
J Hwang, J Son, JY Zhang, A Janotti, CG Van de Walle, S Stemmer
Physical Review B 87 (6), 060101, 2013
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 2018
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
Symmetry lowering in extreme-electron-density perovskite quantum wells
JY Zhang, J Hwang, S Raghavan, S Stemmer
Physical review letters 110 (25), 256401, 2013
Variable resolution fluctuation electron microscopy on Cu-Zr metallic glass using a wide range of coherent STEM probe size
J Hwang, PM Voyles
Microscopy and Microanalysis 17 (1), 67-74, 2011
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ...
Journal of Applied Physics 121 (9), 2017
Structural, optical, and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals
A Parra-Palomino, O Perales–Perez, R Singhal, M Tomar, J Hwang, ...
Journal of Applied Physics 103 (7), 2008
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