Ravi Droopad
Ravi Droopad
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Method for fabricating a semiconductor structure including a metal oxide interface with silicon
J Ramdani, R Droopad, Z Yu
US Patent 6,709,989, 2004
Field effect transistors with gate dielectric on Si
K Eisenbeiser, JM Finder, Z Yu, J Ramdani, JA Curless, JA Hallmark, ...
Applied Physics Letters 76 (10), 1324-1326, 2000
Epitaxial thin films on
J Wang, H Zheng, Z Ma, S Prasertchoung, M Wuttig, R Droopad, J Yu, ...
Applied Physics Letters 85 (13), 2574-2576, 2004
Band discontinuities at epitaxial heterojunctions
SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani, K Eisenbeiser
Applied Physics Letters 77 (11), 1662-1664, 2000
Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm
RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...
IEEE Electron Device Letters 28 (12), 1080-1082, 2007
Epitaxial oxide thin films on Si (001)
Z Yu, J Ramdani, JA Curless, CD Overgaard, JM Finder, R Droopad, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
Epitaxial ferroelectric thin films on Si using template layers
Y Wang, C Ganpule, BT Liu, H Li, K Mori, B Hill, M Wuttig, R Ramesh, ...
Applied Physics Letters 80 (1), 97-99, 2002
Low leakage current metal oxide-nitrides and method of fabricating same
Z Yu, R Droopad, C Overgaard, J Edwards
US Patent App. 09/755,691, 2002
Two-dimensional growth of high-quality strontium titanate thin films on Si
H Li, X Hu, Y Wei, Z Yu, X Zhang, R Droopad, AA Demkov, J Edwards Jr, ...
Journal of applied physics 93 (8), 4521-4525, 2003
Semiconductor structure
Z Yu, J Ramdani, R Droopad
US Patent 6,501,121, 2002
Band offset and structure of heterojunctions
SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (3 …, 2001
Electro-optic structure and process for fabricating same
J Ramdani, L Hilt, R Droopad, WJ Ooms
US Patent 6,493,497, 2002
Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si
V Nagarajan, A Stanishevsky, L Chen, T Zhao, BT Liu, J Melngailis, ...
Applied physics letters 81 (22), 4215-4217, 2002
Optical properties of bulk and thin-film on Si and Pt
S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline films
Y Wei, X Hu, Y Liang, DC Jordan, B Craigo, R Droopad, Z Yu, A Demkov, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
J Ramdani, R Droopad, LL Hilt, KW Eisenbeiser
US Patent 6,392,257, 2002
Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
M Passlack, JK Abrokwah, R Droopad, Z Yu, C Overgaard, SI Yi, M Hale, ...
IEEE Electron Device Letters 23 (9), 508-510, 2002
GaAs MESFETs fabricated on Si substrates using a SrTiO3buffer layer
K Eisenbeiser, R Emrick, R Droopad, Z Yu, J Finder, S Rockwell, ...
IEEE Electron Device Letters 23 (6), 300-302, 2002
Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors
S Ghose, S Rahman, L Hong, JS Rojas-Ramirez, H Jin, K Park, R Klie, ...
Journal of Applied Physics 122 (9), 095302, 2017
The interface of epitaxial on silicon: in situ and ex situ studies
X Hu, H Li, Y Liang, Y Wei, Z Yu, D Marshall, J Edwards Jr, R Droopad, ...
Applied physics letters 82 (2), 203-205, 2003
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