| Single chip gas sensor array for air quality monitoring CS Prajapati, R Soman, SB Rudraswamy, M Nayak, N Bhat Journal of Microelectromechanical systems 26 (2), 433-439, 2017 | 72 | 2017 |
| A Performance Comparison Between -Ga2O3 and GaN HEMTs S Kumar, R Soman, AS Pratiyush, R Muralidharan, DN Nath IEEE Transactions on Electron Devices 66 (8), 3310-3317, 2019 | 35 | 2019 |
| UV/near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction SV Solanke, R Soman, M Rangarajan, S Raghavan, DN Nath Sensors and Actuators A: Physical 317, 112455, 2021 | 34 | 2021 |
| Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury IEEE Electron Device Letters 43 (9), 1527-1530, 2022 | 21 | 2022 |
| Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes N Mohan, M Manikant, R Soman, S Raghavan Journal of Applied Physics 118 (13), 2015 | 21 | 2015 |
| Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ... 2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017 | 17 | 2017 |
| Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices M Malakoutian, X Zheng, K Woo, R Soman, A Kasperovich, J Pomeroy, ... Advanced Functional Materials 32 (47), 2208997, 2022 | 15 | 2022 |
| Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling R Soman, M Malakoutian, B Shankar, D Field, E Akso, N Hatui, NJ Hines, ... 2022 International Electron Devices Meeting (IEDM), 30.8. 1-30.8. 4, 2022 | 10 | 2022 |
| Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates R Soman, N Mohan, H Chandrasekar, N Bhat, S Raghavan Journal of Applied Physics 124 (24), 2018 | 9 | 2018 |
| Curvature management in buffer layer for device quality GaN growth on Si (111) A Bardhan, N Mohan, R Soman, Manikant, S Raghavan IETE Technical Review 33 (1), 82-87, 2016 | 7 | 2016 |
| Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs X Zhou, M Malakoutian, R Soman, Z Bian, RP Martinez, S Chowdhury IEEE Transactions on Electron Devices 69 (12), 6650-6655, 2022 | 6 | 2022 |
| An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate R Soman, S Raghavan, N Bhat Semiconductor Science and Technology 34 (12), 125011, 2019 | 6 | 2019 |
| Buried channel normally-off AlGaN/GaN MOS-HEMT with a pn junction in GaN buffer R Soman, M Sharma, N Ramesh, D Nath, R Muralidharan, KN Bhat, ... Semiconductor Science and Technology 33 (9), 095006, 2018 | 4 | 2018 |
| ESD behavior of AlGaN/GaN HEMT on Si: Physical insights, design aspects, cumulative degradation and failure analysis B Shankar, A Soni, M Singh, R Soman, KN Bhat, S Raghavan, N Bhat, ... 2017 30th International Conference on VLSI Design and 2017 16th …, 2017 | 4 | 2017 |
| Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ... Nanotechnology 33 (50), 505704, 2022 | 3 | 2022 |
| Demonstration of N-polar All-AlGaN high electron mobility transistors with 375 mA/mm drive current M Noshin, R Soman, S Chowdhury IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Scaling study on high-current density low-dispersion GaN vertical FinFETs S Jeong, K Lee, J Chun, R Soman, S Chowdhury IEEE Electron Device Letters, 2023 | 2 | 2023 |
| A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same M Noshin, R Soman, X Xu, S Chowdhury Semiconductor Science and Technology 37 (7), 075018, 2022 | 2 | 2022 |
| Normally off AlGaN/GaN FinFET devices on Si substrate R Soman, S Raghavan, N Bhat 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | 2 | 2018 |
| Development of 300–400° C grown diamond for semiconductor devices thermal management M Malakoutian, R Soman, K Woo, S Chowdhury MRS Advances 9 (1), 7-11, 2024 | 1 | 2024 |
