| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 233 | 2022 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 123 | 2019 |
| RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 49 | 2020 |
| Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 46 | 2019 |
| Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ... IEEE Electron Device Letters 41 (7), 989-992, 2020 | 38 | 2020 |
| Toward high voltage radio frequency devices in β-Ga2O3 N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ... Applied Physics Letters 117 (24), 2020 | 30 | 2020 |
| Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model NC Miller, NA Moser, RC Fitch, JK Gillespie, KJ Liddy, DE Walker, ... 2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON …, 2021 | 14 | 2021 |
| 500° C operation of β-Ga2O3 field-effect transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, DM Dryden, J Williams, H Lee, ... Applied Physics Letters 121 (24), 2022 | 12 | 2022 |
| Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit DM Dryden, KJ Liddy, AE Islam, JC Williams, DE Walker, NS Hendricks, ... IEEE Electron Device Letters 43 (8), 1307-1310, 2022 | 12 | 2022 |
| Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs SH Kim, D Shoemaker, B Chatterjee, AJ Green, KD Chabak, ER Heller, ... IEEE Transactions on Electron Devices 69 (3), 1251-1257, 2022 | 12 | 2022 |
| Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements NC Miller, DT Davis, S Khandelwal, F Sischka, R Gilbert, M Elliott, ... 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2022 | 10 | 2022 |
| Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown NS Hendricks, E Farzana, AE Islam, KD Leedy, KJ Liddy, J Williams, ... Applied Physics Express 16 (7), 071002, 2023 | 8 | 2023 |
| Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals AE Islam, C Zhang, K DeLello, DA Muller, KD Leedy, S Ganguli, ... IEEE Transactions on Electron Devices 69 (10), 5656-5663, 2022 | 7 | 2022 |
| Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing AE Islam, KD Leedy, NA Moser, S Ganguli, KJ Liddy, AJ Green, ... 2021 Device Research Conference (DRC), 1-2, 2021 | 7 | 2021 |
| Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach SH Kim, D Shoemaker, AJ Green, KD Chabak, KJ Liddy, S Graham, ... IEEE Transactions on Electron Devices 70 (4), 1628-1635, 2023 | 6 | 2023 |
| Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes NS Hendricks, AE Islam, EA Sowers, J Williams, DM Dryden, KJ Liddy, ... Journal of Applied Physics 135 (9), 2024 | 2 | 2024 |
| First Demonstration of 500 °C Operation of β-Ga2O3 MOSFET in Air NP Sepelak, J Williams, DM Dryden, R Kahler, KJ Liddy, W Wang, ... 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | 2 | 2022 |
| Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs KJ Liddy, NS Hendricks, AJ Green, A Popp, MT Lindquist, KD Leedy, ... 2019 Device Research Conference (DRC), 219-220, 2019 | 2 | 2019 |
| High temperature operation of beta-Ga 2 O 3 transistors AE Islam, NP Sepelak, KJ Liddy, R Kahler, J Williams, DM Dryden, ... IMAPSource Proc. 2022, 000059-000062, 2023 | 1 | 2023 |
| An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications NC Miller, A Brown, M Elliott, R Gilbert, DT Davis, AE Islam, D Walker, ... IEEE Journal of the Electron Devices Society, 2023 | 1 | 2023 |
Andrew J. GreenAir Force Research LabVerified email at us.af.mil
