D Basu
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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …
M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...
2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011
Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
D Basu, MJ Gilbert, LF Register, SK Banerjee, AH MacDonald
Applied Physics Letters 92 (4), 2008
Graphene for CMOS and beyond CMOS applications
SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ...
Proceedings of the IEEE 98 (12), 2032-2046, 2010
Non-planar semiconductor device having channel region with low band-gap cladding layer
M Radosavljevic, G Dewey, B Chu-Kung, D Basu, SK Gardner, S Suri, ...
US Patent 8,785,909, 2014
Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence
D Basu, LF Register, D Reddy, AH MacDonald, SK Banerjee
Physical Review B 82 (7), 075409, 2010
Compact model for ultrathin low electron effective mass double gate MOSFET
AS Roy, SP Mudanai, D Basu, MA Stettler
IEEE Transactions on Electron Devices 61 (2), 308-313, 2013
An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects
D Basu, AK Dutta
Solid-state electronics 50 (7-8), 1299-1309, 2006
Surface roughness exacerbated performance degradation in silicon nanowire transistors
D Basu, MJ Gilbert, SK Banerjee
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers
D Basu, LF Register, AH MacDonald, SK Banerjee
Physical Review B 84 (3), 035449, 2011
Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing
B Sell, S An, J Armstrong, D Bahr, B Bains, R Bambery, K Bang, D Basu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts
SH Park, N Kharche, D Basu, Z Jiang, SK Nayak, CE Weber, G Hegde, ...
71st Device Research Conference, 125-126, 2013
Three discrete areas within the chromosomal 8p21. 3–23 region are associated with the development of breast carcinoma of Indian patients
N Bhattacharya, N Chunder, D Basu, A Roy, S Mandal, J Majumder, ...
Experimental and molecular pathology 76 (3), 264-271, 2004
Ballistic band-to-band tunneling in the OFF state in InGaAs MOSFETs
D Basu, R Kotlyar, CE Weber, MA Stettler
IEEE Transactions on Electron Devices 61 (10), 3417-3422, 2014
National ambient air quality status and trends in India–2010
S Kamyotra, D Basu, S Agrawal, T Darbari, S Roychoudhury, J Hagar, ...
Delhi, India: Central Pollution Control Board (CPCB) Ministry of Environment …, 2012
Molecular diagnosis of myotonic dystrophy and Huntington's disease from Calcutta, India.
P Basu, PK Gunguly, D Basu, NP Bhattacharyya, NP Bhattacharya
Neurology India 46 (3), 199-203, 1998
Source contact and channel interface to reduce body charging from band-to-band tunneling
D Basu, R Mehandru, SH Sung
US Patent 11,094,716, 2021
From coherent states in adjacent graphene layers toward low-power logic circuits
LF Register, D Basu, D Reddy
Advances in Condensed Matter Physics 2011, 2011
Hyperfunctioning papillary carcinoma of thyroid: a case report and brief literature review
SC Sistla, J John, N Maroju, D Basu
Internet J Endocrinol 3 (2), 2007
Using TCAD, response surface model and Monte Carlo methods to model processes and reduce device variation
D Basu, J Guha, P Hatab, P Vaidyanathan, C Mouli, SK Groothuis
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
Prediction of retinoblastoma and osteosarcoma: linkage analysis of families by using polymorphic markers around RB1 locus
N Chunder, D Basu, A Roy, S Roychoudhury, CK Panda
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