| Graphene as an electron shuttle for silver deoxidation: removing a key barrier to plasmonics and metamaterials for SERS in the visible M Losurdo, I Bergmair, B Dastmalchi, TH Kim, MM Giangregroio, W Jiao, ... Advanced Functional Materials 24 (13), 1864-1878, 2014 | 99 | 2014 |
| Evidence of plasmonic coupling in gallium nanoparticles/graphene/SiC C Yi, TH Kim, W Jiao, Y Yang, A Lazarides, K Hingerl, G Bruno, A Brown, ... Small 8 (17), 2721-2730, 2012 | 53 | 2012 |
| Demonstrating the capability of the high-performance plasmonic gallium–graphene couple M Losurdo, C Yi, A Suvorova, S Rubanov, TH Kim, MM Giangregorio, ... ACS nano 8 (3), 3031-3041, 2014 | 52 | 2014 |
| GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ... AIP Advances 5 (6), 2015 | 18 | 2015 |
| Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy W Kong, WY Jiao, JC Li, K Collar, TH Kim, JH Leach, AS Brown Applied Physics Letters 107 (3), 2015 | 16 | 2015 |
| Growth of GaAs1− xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics J Li, TH Kim, K Forghani, W Jiao, W Kong, K Collar, TF Kuech, AS Brown Journal of Applied Physics 116 (4), 2014 | 15 | 2014 |
| Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown AIP Advances 6 (3), 2016 | 12 | 2016 |
| Room temperature photoluminescence from InxAl (1− x) N films deposited by plasma-assisted molecular beam epitaxy W Kong, A Mohanta, AT Roberts, WY Jiao, J Fournelle, TH Kim, ... Applied Physics Letters 105 (13), 2014 | 11 | 2014 |
| Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy K Collar, J Li, W Jiao, Y Guan, M Losurdo, J Humlicek, AS Brown AIP Advances 7 (7), 2017 | 10 | 2017 |
| The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy W Jiao, W Kong, J Li, K Collar, TH Kim, AS Brown Applied Physics Letters 103 (16), 2013 | 10 | 2013 |
| Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates KN Collar, J Li, W Jiao, W Kong, AS Brown Nanotechnology 29 (3), 035604, 2017 | 9 | 2017 |
| Impact of vicinal GaAs (001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1− xBix J Li, K Collar, W Jiao, W Kong, TF Kuech, SE Babcock, A Brown Applied Physics Letters 108 (23), 2016 | 6 | 2016 |
| The characteristics of MBE-grown InxAl1− xN/GaN surface states W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown Applied Physics Letters 109 (8), 2016 | 5 | 2016 |
| Structural Characterization of the Nanocolumnar Microstructure of InAlN W Kong, WY Jiao, JC Li, K Collar, JH Leach, J Fournelle, TH Kim, ... Journal of Electronic Materials 45, 654-660, 2016 | 5 | 2016 |
| Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy W Kong, AT Roberts, WY Jiao, J Fournelle, TH Kim, M Losurdo, HO Everitt, ... Applied Physics Letters 107 (13), 2015 | 3 | 2015 |
| UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy W Kong, AT Roberts, WY Jiao, J Fournelle, TH Kim, M Losurdo, HO Everitt, ... AIP Advances 7 (3), 2017 | | 2017 |
| The characteristics of MBE-grown In {sub x} Al {sub 1− x} N/GaN surface states W Jiao, W Kong, J Li, TH Kim, AS Brown, K Collar, M Losurdo Applied Physics Letters 109 (8), 2016 | | 2016 |
| The Relationship Between Terminating Oxide Chemistry and InAs (100) Two-Dimensional Electron Gas (2DEG) Conductivity K Collar, W Jiao, J Li, W Kong, A Brown APS March Meeting Abstracts 2015, M9. 005, 2015 | | 2015 |
| Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy W Jiao Duke University, 2015 | | 2015 |
| Room temperature photoluminescence from In {sub x} Al {sub (1− x)} N films deposited by plasma-assisted molecular beam epitaxy WY Jiao, TH Kim, AS Brown, A Mohanta, AT Roberts, J Fournelle, ... Applied Physics Letters 105 (13), 2014 | | 2014 |
