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Dong-gun Lee
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Eu luminescence center created by Mg codoping in Eu-doped GaN
D Lee, A Nishikawa, Y Terai, Y Fujiwara
Applied Physics Letters 100 (17), 171904, 2012
752012
The role of donor-acceptor pairs in the excitation of Eu-ions in GaN: Eu epitaxial layers
B Mitchell, J Poplawsky, D Lee, A Koizumi, Y Fujiwara, V Dierolf
Journal of Applied Physics 115 (20), 204501, 2014
512014
Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites
R Wakamatsu, D Lee, A Koizumi, V Dierolf, Y Fujiwara
Journal of Applied Physics 114 (4), 043501, 2013
452013
Method of fabricating light emitting device package
JH Yeon, SH Sim, HN Yoo, DG Lee
US Patent 10,438,994, 2019
422019
Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications
B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, ...
Scientific Reports 6, 18808, 2016
392016
Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy
T Arai, D Timmerman, R Wakamatsu, D Lee, A Koizumi, Y Fujiwara
Journal of Luminescence 158, 70-74, 2015
282015
Effect of thermal annealing on luminescence properties of Eu, Mg-codoped GaN grown by organometallic vapor phase epitaxy
D Lee, R Wakamatsu, A Koizumi, Y Terai, JD Poplawsky, V Dierolf, ...
Applied Physics Letters 102 (14), 141904, 2013
262013
Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe
B Mitchell, D Lee, D Lee, A Koizumi, J Poplawsky, Y Fujiwara, V Dierolf
Physical Review B 88 (12), 121202, 2013
242013
Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate
R Wakamatsu, D Lee, A Koizumi, V Dierolf, Y Terai, Y Fujiwara
Japanese Journal of Applied Physics 52 (8S), 08JM03, 2013
242013
Chip mounting apparatus and method using the same
JS Lee, HK Seong, YI Kim, SH Sim, DG Lee
US Patent 10,607,877, 2020
202020
Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity
T Inaba, D Lee, R Wakamatsu, T Kojima, B Mitchell, A Capretti, ...
AIP Advances 6 (4), 045105, 2016
192016
Vibrationally induced center reconfiguration in co-doped GaN: Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels
B Mitchell, D Lee, D Lee, Y Fujiwara, V Dierolf
Applied Physics Letters 103 (24), 242105, 2013
182013
Light emitting device package
DG Lee, YI Kim, YS Park, JS Lee, WT Lim
US Patent 10,763,399, 2020
162020
Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
D Lee, R Wakamatsu, A Koizumi, Y Terai, Y Fujiwara
Japanese Journal of Applied Physics 52 (8S), 08JM01, 2013
162013
Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy
A Nishikawa, N Furukawa, D Lee, K Kawabata, T Matsuno, Y Terai, ...
MRS Online Proceedings Library 1342 (1), 27-32, 2011
142011
Light emitting device package and display device using the same
DG Lee, YI Kim, HS Noh, HK Seong, SH Sim, HN Yoo
US Patent 10,566,318, 2020
132020
Light-emitting device packages and methods of manufacturing the same
KIM Jung-Sub, YI Kim, D Lee, KW Hwang, J Lee, M Gwon
US Patent 9,893,251, 2018
132018
Synthesis and characterization of a liquid Eu precursor (EuCppm2) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy
B Mitchell, A Koizumi, T Nunokawa, R Wakamatsu, D Lee, Y Saitoh, ...
Materials Chemistry and Physics 193, 140-146, 2017
122017
Nanostructure semiconductor light emitting device
JS Kim, YW Seo, DG Lee, BK Chung, DM Chun, SJ Choi
US Patent 9,406,839, 2016
112016
In situ Eu doping into AlxGa 1− xN grown by organometallic vapor phase epitaxy to improve luminescence properties
A Koizumi, K Kawabata, D Lee, A Nishikawa, Y Terai, H Ofuchi, T Honma, ...
Optical Materials 41, 75-79, 2015
102015
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