V.P. Markevich
V.P. Markevich
Verified email at manchester.ac.uk
Title
Cited by
Cited by
Year
Experimental evidence of the oxygen dimer in silicon
LI Murin, T Hallberg, VP Markevich, JL Lindström
Physical review letters 80 (1), 93, 1998
1601998
Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ...
Physical Review B 70 (23), 235213, 2004
1442004
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
1292008
Hydrogen–oxygen interaction in silicon at around 50 C
VP Markevich, M Suezawa
Journal of applied physics 83 (6), 2988-2993, 1998
1021998
I6nterstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
J Coutinho, R Jones, PR Briddon, S Öberg, LI Murin, VP Markevich, ...
Physical Review B 65 (1), 014109, 2001
932001
Electronic properties of antimony-vacancy complex in Ge crystals
VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin
Journal of applied physics 95 (8), 4078-4083, 2004
902004
Defect reactions associated with divacancy elimination in silicon
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström
Journal of Physics: Condensed Matter 15 (39), S2779, 2003
872003
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
JL Lindström, LI Murin, T Hallberg, VP Markevich, BG Svensson, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
872002
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
772009
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016
732016
Electronic properties of vacancy–oxygen complex in Ge crystals
VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ...
Applied Physics Letters 81 (10), 1821-1823, 2002
732002
Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon
JL Lindström, LI Murin, VP Markevich, T Hallberg, BG Svensson
Physica B: Condensed Matter 273, 291-295, 1999
581999
Electrical and optical characterization of thermal donors in silicon
YAI Latushko, LF Makarenko, VP Markevich, LI Murin
physica status solidi (a) 93 (2), K181-K184, 1986
581986
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
AR Peaker, VP Markevich, J Coutinho
Journal of Applied Physics 123 (16), 161559, 2018
552018
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
LI Murin, EA Tolkacheva, VP Markevich, AR Peaker, B Hamilton, ...
Applied Physics Letters 98 (18), 182101, 2011
532011
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
522016
The VO2* defect in silicon
JL Lindström, LI Murin, BG Svensson, VP Markevich, T Hallberg
Physica B: Condensed Matter 340, 509-513, 2003
522003
Radiation‐induced shallow donors in Czochralski‐grown silicon crystals saturated with hydrogen
VP Markevich, M Suezawa, K Sumino, LI Murin
Journal of applied physics 76 (11), 7347-7350, 1994
521994
Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies
LI Murin, JL Lindström, G Davies, VP Markevich
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
482006
Thermal double donors and quantum dots
J Coutinho, R Jones, LI Murin, VP Markevich, JL Lindström, S Öberg, ...
Physical review letters 87 (23), 235501, 2001
462001
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Articles 1–20