Arnel Salvador
Arnel Salvador
National Institute of Physics
Verified email at nip.upd.edu.ph
Title
Cited by
Cited by
Year
Emerging gallium nitride based devices
SN Mohammad, AA Salvador, H Morkoc
Proceedings of the IEEE 83 (10), 1306-1355, 1995
7641995
An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy
S Strite, J Ruan, Z Li, A Salvador, H Chen, DJ Smith, WJ Choyke, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
4001991
High speed, low noise ultraviolet photodetectors based on GaN and structures
GY Xu, A Salvador, W Kim, Z Fan, C Lu, H Tang, H Morkoç, G Smith, ...
Applied physics letters 71 (15), 2154-2156, 1997
2991997
Planificación territorial del turismo
SA Clavé, FG Reverté
Editorial UOC, 2011
2732011
GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
ME Lin, S Strite, A Agarwal, A Salvador, GL Zhou, N Teraguchi, A Rockett, ...
Applied physics letters 62 (7), 702-704, 1993
2111993
Nature of Mg impurities in GaN
JZ Li, JY Lin, HX Jiang, A Salvador, A Botchkarev, H Morkoc
Applied physics letters 69 (10), 1474-1476, 1996
1751996
Mechanisms of band‐edge emission in Mg‐doped p‐type GaN
M Smith, GD Chen, JY Lin, HX Jiang, A Salvador, BN Sverdlov, ...
Applied physics letters 68 (14), 1883-1885, 1996
171*1996
High transconductance normally-off GaN MODFETs
A Ozgur, W Kim, Z Fan, A Botchkarev, A Salvador, SN Mohammad, ...
Electronics Letters 31 (16), 1389-1390, 1995
1711995
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
1501998
Time-resolved Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN
KT Tsen, DK Ferry, A Botchkarev, B Sverdlov, A Salvador, H Morkoc
Applied physics letters 72 (17), 2132-2134, 1998
1271998
Near-ideal platinum-GaN Schottky diodes
SN Mohammad, Z Fan, AE Botchkarev, W Kim, O Aktas, A Salvador, ...
Electronics Letters 32 (6), 598-599, 1996
1271996
Recombination dynamics of free and localized excitons in G a N/G a 0.93 Al 0.07 N quantum wells
P Lefebvre, J Allègre, B Gil, A Kavokine, H Mathieu, W Kim, A Salvador, ...
Physical Review B 57 (16), R9447, 1998
1211998
Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy
W Kim, A Salvador, AE Botchkarev, O Aktas, SN Mohammad, H Morcoc
Applied physics letters 69 (4), 559-561, 1996
1141996
Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy
DJ Smith, D Chandrasekhar, B Sverdlov, A Botchkarev, A Salvador, ...
Applied physics letters 67 (13), 1830-1832, 1995
1071995
Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy
DC Reynolds, DC Look, W Kim, Ö Aktas, A Botchkarev, A Salvador, ...
Journal of applied physics 80 (1), 594-596, 1996
1041996
Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN
KT Tsen, RP Joshi, DK Ferry, A Botchkarev, B Sverdlov, A Salvador, ...
Applied physics letters 68 (21), 2990-2992, 1996
1001996
Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
W Kim, ÖÜ Aktas, AE Botchkarev, A Salvador, SN Mohammad, H Morkoç
Journal of applied physics 79 (10), 7657-7666, 1996
971996
Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN
KT Tsen, DK Ferry, A Botchkarev, B Sverdlov, A Salvador, H Morkoc
Applied physics letters 71 (13), 1852-1853, 1997
911997
Deep‐center hopping conduction in GaN
DC Look, DC Reynolds, W Kim, Ö Aktas, A Botchkarev, A Salvador, ...
Journal of applied physics 80 (5), 2960-2963, 1996
911996
Excitonic recombination in GaN grown by molecular beam epitaxy
M Smith, GD Chen, JZ Li, JY Lin, HX Jiang, A Salvador, WK Kim, O Aktas, ...
Applied physics letters 67 (23), 3387-3389, 1995
901995
The system can't perform the operation now. Try again later.
Articles 1–20