| Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN C Adelmann, J Brault, D Jalabert, P Gentile, H Mariette, G Mula, B Daudin Journal of Applied Physics 91 (12), 9638-9645, 2002 | 229 | 2002 |
| Gallium adsorption on (0001) GaN surfaces C Adelmann, J Brault, G Mula, B Daudin, L Lymperakis, J Neugebauer Physical Review B 67 (16), 165419, 2003 | 188 | 2003 |
| Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP (001) J Brault, M Gendry, G Grenet, G Hollinger, Y Desieres, T Benyattou Applied physics letters 73 (20), 2932-2934, 1998 | 181 | 1998 |
| Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy S Brochen, J Brault, S Chenot, A Dussaigne, M Leroux, B Damilano Applied Physics Letters 103 (3), 2013 | 132 | 2013 |
| Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP (001) A Weber, O Gauthier-Lafaye, FH Julien, J Brault, M Gendry, Y Desieres, ... Applied physics letters 74 (3), 413-415, 1999 | 119 | 1999 |
| Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001) J Brault, M Gendry, G Grenet, G Hollinger, J Olivares, B Salem, ... Journal of applied physics 92 (1), 506-510, 2002 | 115 | 2002 |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ... Journal of applied physics 95 (9), 4761-4766, 2004 | 110 | 2004 |
| Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy E Monroy, B Daudin, E Bellet-Amalric, N Gogneau, D Jalabert, F Enjalbert, ... Journal of Applied Physics 93 (3), 1550-1556, 2003 | 110 | 2003 |
| Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 E Finkman, S Maimon, V Immer, G Bahir, SE Schacham, F Fossard, ... Physical Review B 63 (4), 045323, 2001 | 87 | 2001 |
| Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding S Pezzagna, J Brault, M Leroux, J Massies, M De Micheli Journal of Applied Physics 103 (12), 2008 | 68 | 2008 |
| Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP (001) J Brault, M Gendry, O Marty, M Pitaval, J Olivares, G Grenet, G Hollinger Applied surface science 162, 584-589, 2000 | 66 | 2000 |
| Interface dipole and band bending in the hybrid heterojunction H Henck, ZB Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ... Physical Review B 96 (11), 115312, 2017 | 63 | 2017 |
| Excitons in nitride heterostructures: From zero-to one-dimensional behavior D Rosales, T Bretagnon, B Gil, A Kahouli, J Brault, B Damilano, J Massies, ... Physical Review B 88 (12), 125437, 2013 | 63 | 2013 |
| High doping level in Mg-doped GaN layers grown at low temperature A Dussaigne, B Damilano, J Brault, J Massies, E Feltin, N Grandjean Journal of Applied Physics 103 (1), 2008 | 60 | 2008 |
| Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN C Adelmann, J Brault, JL Rouvière, H Mariette, G Mula, B Daudin Journal of Applied Physics 91 (8), 5498-5500, 2002 | 54 | 2002 |
| Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M Nemoz, R Dagher, S Matta, A Michon, P Vennéguès, J Brault Journal of Crystal Growth 461, 10-15, 2017 | 53 | 2017 |
| Thickness and substrate effects on AlN thin film growth at room temperature B Abdallah, C Duquenne, MP Besland, E Gautron, PY Jouan, PY Tessier, ... The European Physical Journal-Applied Physics 43 (3), 309-313, 2008 | 52 | 2008 |
| Selective area sublimation: a simple top-down route for GaN-based nanowire fabrication B Damilano, S Vézian, J Brault, B Alloing, J Massies Nano Letters 16 (3), 1863-1868, 2016 | 51 | 2016 |
| Ultra-violet GaN/Al0. 5Ga0. 5N quantum dot based light emitting diodes J Brault, B Damilano, A Kahouli, S Chenot, M Leroux, B Vinter, J Massies Journal of crystal growth 363, 282-286, 2013 | 51 | 2013 |
| A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ... Applied Physics Letters 109 (24), 2016 | 50 | 2016 |
