| Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator H Kim, WJ Lee, AC Farrell, A Balgarkashi, DL Huffaker Nano Letters, DOI: 10.1021/acs.nanolett.7b01360, 2017 | 70 | 2017 |
| Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition D Panda, A Balgarkashi, S Shetty, H Ghadi, B Tongbram, S Chakrabarti Materials Science in Semiconductor Processing 60, 40-44, 2017 | 31 | 2017 |
| III–V integration on Si (100): vertical nanospades L Güniat, S Martí-Sánchez, O Garcia, M Boscardin, D Vindice, N Tappy, ... ACS nano 13 (5), 5833-5840, 2019 | 27 | 2019 |
| Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure D Panda, J Saha, A Balgarkashi, S Shetty, H Rawool, SM Singh, ... Journal of Alloys and Compounds 736, 216-224, 2018 | 19 | 2018 |
| Selective area epitaxy of GaAs: The unintuitive role of feature size and pitch D Dede, F Glas, V Piazza, N Morgan, M Friedl, L Güniat, EN Dayi, ... Nanotechnology 33 (48), 485604, 2022 | 12 | 2022 |
| Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure B Tongbram, A Ahmad, S Sengupta, A Mandal, J Singhal, A Balgarkashi, ... Journal of Luminescence 192, 89-97, 2017 | 12 | 2017 |
| Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires E Sutter, JS French, A Balgarkashi, N Tappy, A Fontcuberta i Morral, ... Nano letters 19 (12), 8903-8910, 2019 | 10 | 2019 |
| Optimizing dot-in-a-well infrared detector architecture for achieving high optical and device efficiency corroborated with theoretically simulated model H Ghadi, J Patwari, P Murkute, D Das, PK Singh, S Dubey, M Bhatt, ... Journal of Alloys and Compounds 751, 337-348, 2018 | 8 | 2018 |
| Comparison of three design architectures for quantum dot infrared photodetectors: InGaAs-capped dots, dots-in-a-well, and submonolayer quantum dots H Ghadi, S Sengupta, S Shetty, A Manohar, A Balgarkashi, S Chakrabarti, ... IEEE Transactions on Nanotechnology 14 (4), 603-607, 2015 | 8 | 2015 |
| Ultrathin GaAsN matrix-induced reduced full width at half maximum of GaAsN/InAs/GaAsN dot-in-a-well heterostructures with extended emission wavelength M Biswas, A Balgarkashi, RL Makkar, A Bhatnagar, S Chakrabarti Journal of Luminescence 194, 341-345, 2018 | 7 | 2018 |
| Enhancement in peak detectivity and operating temperature of strain-coupled InAs/GaAs quantum dot infrared photodetectors by rapid thermal annealing H Ghadi, S Shetty, S Adhikary, A Balgarkashi, A Manohar, S Chakrabarti IEEE Transactions on Nanotechnology 14 (4), 668-672, 2015 | 7 | 2015 |
| Facet-driven formation of axial and radial In (Ga) As clusters in GaAs nanowires A Balgarkashi, S Ramanandan, N Tappy, M Nahra, W Kim, L Guniat, ... Journal of Optics 22 (8), 2020 | 6 | 2020 |
| Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots M Biswas, S Singh, A Balgarkashi, R Makkar, A Bhatnagar, S Sreedhara, ... Journal of Alloys and Compounds 748, 601-607, 2018 | 6 | 2018 |
| Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane J Jasiński, A Balgarkashi, V Piazza, D Dede, A Surrente, M Baranowski, ... 2D Materials 9 (4), 045006, 2022 | 5 | 2022 |
| GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays L Güniat, L Ghisalberti, L Wang, C Dais, N Morgan, D Dede, W Kim, ... Nanoscale Horizons 7 (2), 211-219, 2022 | 5 | 2022 |
| Defect annihilation-mediated enhanced activation energy of GaAs0. 979N0. 021-capped InAs/GaAs quantum dots by H− ion implantation M Biswas, S Singh, A Balgarkashi, RL Makkar, A Bhatnagar, ... Thin Solid Films 639, 73-77, 2017 | 4 | 2017 |
| Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS₂ Using a GaAs Nanowire Array A Balgarkashi, V Piazza, J Jasiński, R Frisenda, A Surrente, ... IEEE Journal of Quantum Electronics 58 (4), 1-8, 2022 | 3 | 2022 |
| In0. 5Ga0. 5As bilayer quantum dot heterostructure for mid-infrared photodetection D Panda, A Balgarkashi, SM Singh, S Shetty, H Rawool, S Chakrabarti Infrared Physics & Technology 94, 263-266, 2018 | 2 | 2018 |
| A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature H Ghadi, S Adhikary, S Shetty, A Balgarkashi, S Chakrabarti Image Sensing Technologies: Materials, Devices, Systems, and Applications II …, 2015 | 2 | 2015 |
| A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers A Balgarkashi, M Biswas, S Singh, D Das, A Bhatnagar, R Makkar, ... Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV …, 2017 | 1 | 2017 |
Anna Fontcuberta i MorralEcole Polytechnique Fédérale de LausanneVerified email at epfl.ch
