Frans Widdershoven
Cited by
Cited by
Modeling statistical dopant fluctuations in MOS transistors
PA Stolk, FP Widdershoven, DBM Klaassen
IEEE Transactions on Electron devices 45 (9), 1960-1971, 1998
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays
C Laborde, F Pittino, HA Verhoeven, SG Lemay, L Selmi, MA Jongsma, ...
Nature nanotechnology 10 (9), 791-795, 2015
Closed-and open-boundary models for gate-current calculation in n-MOSFETs
A Dalla Serra, A Abramo, P Palestri, L Selmi, F Widdershoven
IEEE Transactions on Electron Devices 48 (8), 1811-1815, 2001
A CMOS pixelated nanocapacitor biosensor platform for high-frequency impedance spectroscopy and imaging
F Widdershoven, A Cossettini, C Laborde, A Bandiziol, PP van Swinderen, ...
IEEE transactions on biomedical circuits and systems 12 (6), 1369-1382, 2018
Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing
PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ...
Journal of the Electrochemical Society 149 (3), G194, 2002
Amiware: Hardware technology drivers of ambient intelligence
S Mukherjee, E Aarts, R Roovers, F Widdershoven, M Ouwerkerk
Springer Science & Business Media, 2006
CMOS biosensor platform
F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ...
2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010
Device modeling of statistical dopant fluctuations in MOS transistors
PA Stolk, FP Widdershoven, DBM Klaassen
SISPAD'97. 1997 International Conference on Simulation of Semiconductor …, 1997
High-frequency nanocapacitor arrays: concept, recent developments, and outlook
SG Lemay, C Laborde, C Renault, A Cossettini, L Selmi, ...
Accounts of chemical research 49 (10), 2355-2362, 2016
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements
F Pittino, L Selmi, F Widdershoven
Solid-state electronics 88, 82-88, 2013
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays
E Vianello, F Driussi, D Esseni, L Selmi, F Widdershoven, MJ van Duuren
IEEE transactions on electron devices 54 (8), 1953-1962, 2007
Numerical simulation of the position and orientation effects on the impedance response of nanoelectrode array biosensors to DNA and PNA strands
F Pittino, F Passerini, L Selmi, F Widdershoven
Microelectronics Journal 45 (12), 1695-1700, 2014
Derivation and numerical verification of a compact analytical model for the AC admittance response of nanoelectrodes, suitable for the analysis and optimization of impedance …
F Pittino, P Scarbolo, F Widdershoven, L Selmi
IEEE Transactions on Nanotechnology 14 (4), 709-716, 2015
On ambient intelligence, needful things and process technologies
C van der Poel, F Pessolano, R Roovers, F Widdershoven, ...
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004
IEEE Trans. Electron Devices
PA Stolk, FP Widdershoven, DBM Klaassen
IEEE Trans. Electron Devices 45 (9), 1960-1971, 1998
Investigation of the energy distribution of stress-induced oxide traps by numerical analysis of the TAT of HEs
F Driussi, R Iob, D Esseni, L Selmi, R van Schaijk, F Widdershoven
IEEE transactions on electron devices 51 (10), 1570-1576, 2004
Flat band voltage shift and oxide properties after rapid thermal annealing
BJ O'Sullivan, PK Hurley, FN Cubaynes, PA Stolk, FP Widdershoven
Microelectronics Reliability 41 (7), 1053-1056, 2001
A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors
P Palestri, AD Serra, L Selmi, M Pavesi, PL Rigolli, A Abramo, ...
IEEE Transactions on Electron Devices 49 (8), 1427-1435, 2002
Experimental characterization of statistically independent defects in gate dielectrics-Part I: Description and Validation of the Model
F Driussi, F Widdershoven, D Esseni, L Selmi, MJ van Duuren
IEEE transactions on electron devices 52 (5), 942-948, 2005
Cathode hot electrons and anode hot holes in tunneling MOS capacitors
P Palestri, L Selmi, E Sangiorgi, M Pavesi, F Widdershoven
30th European Solid-State Device Research Conference, 296-299, 2000
The system can't perform the operation now. Try again later.
Articles 1–20