Michael A Reshchikov
Michael A Reshchikov
Verified email at vcu.edu - Homepage
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A comprehensive review of ZnO materials and devices
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ...
Journal of applied physics 98 (4), 11, 2005
109902005
Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç
Journal of applied physics 97 (6), 5-19, 2005
18372005
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
MA Reshchikov, GC Yi, BW Wessels
Physical Review B 59 (20), 13176, 1999
2741999
Yellow luminescence of gallium nitride generated by carbon defect complexes
DO Demchenko, IC Diallo, MA Reshchikov
Physical review letters 110 (8), 087404, 2013
1912013
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
P Visconti, KM Jones, MA Reshchikov, R Cingolani, H Morkoç, RJ Molnar
Applied Physics Letters 77 (22), 3532-3534, 2000
1852000
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
MA Reshchikov, RY Korotkov
Physical Review B 64 (11), 115205, 2001
1832001
Luminescence properties of defects in ZnO
MA Reshchikov, H Morkoc, B Nemeth, J Nause, J Xie, B Hertog, ...
Physica B: Condensed Matter 401, 358-361, 2007
1722007
Energy band bowing parameter in alloys
F Yun, MA Reshchikov, L He, T King, H Morkoç, SW Novak, L Wei
Journal of applied physics 92 (8), 4837-4839, 2002
1552002
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
MA Reshchikov, DO Demchenko, A Usikov, H Helava, Y Makarov
Physical Review B 90 (23), 235203, 2014
1342014
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer
Journal of Applied Physics 87 (7), 3351-3354, 2000
1302000
Alivov Ya I, Liu C, Teke A, Reshchikov MA, Doğan S, Avrutin V, Cho SJ, Morkoç H
Ü Özgur
J. Appl. Phys 98, 041301, 2005
1182005
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ...
Applied Physics Letters 78 (26), 4145-4147, 2001
1132001
Surface photovoltage in undoped -type GaN
MA Reshchikov, M Foussekis, AA Baski
Journal of Applied Physics 107 (11), 113535, 2010
902010
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoc, B Nemeth, ...
Applied physics letters 84 (13), 2268-2270, 2004
902004
Yellow and green luminescence in a freestanding GaN template
MA Reshchikov, H Morkoç, SS Park, KY Lee
Applied Physics Letters 78 (20), 3041-3043, 2001
862001
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
MA Reshchikov, H Morkoç, SS Park, KY Lee
Applied physics letters 81 (26), 4970-4972, 2002
842002
Green luminescence in Mg-doped GaN
MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ...
Physical Review B 90 (3), 035207, 2014
822014
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
MA Reshchikov, AA Kvasov, MF Bishop, T McMullen, A Usikov, ...
Physical Review B 84 (7), 075212, 2011
752011
Photoadsorption and photodesorption for GaN
M Foussekis, AA Baski, MA Reshchikov
Applied Physics Letters 94 (16), 162116, 2009
712009
Acceptors in undoped GaN studied by transient photoluminescence
RY Korotkov, MA Reshchikov, BW Wessels
Physica B: Condensed Matter 325, 1-7, 2003
682003
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Articles 1–20