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| Electrical and optical properties of tin oxide films doped with F and (Sb+ F) E Shanthi, A Banerjee, V Dutta, KL Chopra Journal of Applied Physics 53 (3), 1615-1621, 1982 | 341 | 1982 |
| Dopant effects in sprayed tin oxide films E Shanthi, A Banerjee, KL Chopra Thin Solid Films 88 (2), 93-100, 1982 | 158 | 1982 |
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| Growth and photoluminescence of GaSb and Ga 1− x In x As y Sb 1− y grown on GaSb substrates by liquid-phase electroepitaxy S Iyer, S Hegde, A Abul-Fadl, KK Bajaj, W Mitchel Physical Review B 47 (3), 1329, 1993 | 62 | 1993 |
| A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range E Ahmad, MR Karim, SB Hafiz, CL Reynolds, Y Liu, S Iyer Scientific reports 7 (1), 10111, 2017 | 44 | 2017 |
| Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy PK Kasanaboina, SK Ojha, SU Sami, CL Reynolds, Y Liu, S Iyer Semiconductor Science and Technology 30 (10), 105036, 2015 | 38 | 2015 |
| Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy PK Kasanaboina, E Ahmad, J Li, CL Reynolds, Y Liu, S Iyer Applied Physics Letters 107 (10), 2015 | 37 | 2015 |
| Nitrogen incorporation and optical studies of GaAsSbN∕ GaAs single quantum well heterostructures K Nunna, S Iyer, L Wu, J Li, S Bharatan, X Wei, RT Senger, KK Bajaj Journal of Applied Physics 102 (5), 2007 | 34 | 2007 |
| Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells J Li, S Iyer, S Bharatan, L Wu, K Nunna, W Collis, KK Bajaj, K Matney Journal of applied physics 98 (1), 2005 | 32 | 2005 |
| Low‐temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy S Iyer, L Small, SM Hegde, KK Bajaj, A Abul‐Fadl Journal of applied physics 77 (11), 5902-5909, 1995 | 31 | 1995 |
| The properties of radio frequency sputtered transparent and conducting ZnO: F films on polyethylene naphthalate substrate A Bowen, J Li, J Lewis, K Sivaramakrishnan, TL Alford, S Iyer Thin Solid Films 519 (6), 1809-1816, 2011 | 30 | 2011 |
| The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN∕ GaAs grown by molecular beam epitaxy S Bharatan, S Iyer, K Nunna, WJ Collis, K Matney, J Reppert, AM Rao, ... Journal of Applied Physics 102 (2), 2007 | 27 | 2007 |
| MBE growth and properties of GaAsSbN/GaAs single quantum wells L Wu, S Iyer, K Nunna, J Li, S Bharatan, W Collis, K Matney Journal of crystal growth 279 (3-4), 293-302, 2005 | 27 | 2005 |
| Te Incorporation in GaAs1-xSbx Nanowires and P-I-N Axial Structure E Ahmad, P Kasanaboina, MR Karim, M Sharma, L Reynolds, Y Liu, ... Semiconductor Science and Technology 31, 125001 (8 pp), 2016 | 26 | 2016 |
| Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100) GaSb S Iyer, S Hegde, KK Bajaj, A Abul‐Fadl, W Mitchel Journal of applied physics 73 (8), 3958-3961, 1993 | 26 | 1993 |
| Bandgap tuning in GaAs1− xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy E Ahmad, SK Ojha, PK Kasanaboina, CL Reynolds, Y Liu, S Iyer Semiconductor Science and Technology 32 (3), 035002, 2017 | 25 | 2017 |
| Pitch-Induced Bandgap Tuning in Self-Catalyzed Growth of Patterned GaAsSb Axial and GaAs/GaAsSb Core-Shell Nanowires using MBE M Sharma, MR Karim, P Kasanaboina, J Li, S Iyer Crystal Growth & Design 17, 730-737, 2017 | 25 | 2017 |
| Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi Shell Nanowires P Kasanaboina, M Sharma, P Deshmukh, CL Reynolds Jr., Y Liu, S Iyer Nanoresearch Letters 11 (1), 1-6, 2016 | 25 | 2016 |
| Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing M Sharma, E Ahmad, D Dev, J Li, CL Reynolds Jr, Y Liu, S Iyer Nanotechnology 30, 034005, 2019 | 24 | 2019 |
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