Shanthi Iyer alias E.Shanthi
Shanthi Iyer alias E.Shanthi
Professor of Electrical and Computer Engineering and Joint School of Nanoscience and Nanoengineering
Verified email at
Cited by
Cited by
Electrical and optical properties of undoped and antimony‐doped tin oxide films
E Shanthi, V Dutta, A Banerjee, KL Chopra
Journal of Applied Physics 51 (12), 6243-6251, 1980
Electrical and optical properties of tin oxide films doped with F and (Sb+ F)
E Shanthi, A Banerjee, V Dutta, KL Chopra
Journal of Applied Physics 53 (3), 1615-1621, 1982
Dopant effects in sprayed tin oxide films
E Shanthi, A Banerjee, KL Chopra
Thin Solid Films 88 (2), 93-100, 1982
Annealing characteristics of tin oxide films prepared by spray pyrolysis
E Shanthi, A Banerjee, V Dutta, KL Chopra
Thin Solid Films 71 (2), 237-244, 1980
Growth and photoluminescence of GaSb and Ga 1− x In x As y Sb 1− y grown on GaSb substrates by liquid-phase electroepitaxy
S Iyer, S Hegde, A Abul-Fadl, KK Bajaj, W Mitchel
Physical Review B 47 (3), 1329, 1993
Low‐temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy
S Iyer, L Small, SM Hegde, KK Bajaj, A Abul‐Fadl
Journal of applied physics 77 (11), 5902-5909, 1995
Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
J Li, S Iyer, S Bharatan, L Wu, K Nunna, W Collis, KK Bajaj, K Matney
Journal of applied physics 98 (1), 013703, 2005
Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100) GaSb
S Iyer, S Hegde, KK Bajaj, A Abul‐Fadl, W Mitchel
Journal of applied physics 73 (8), 3958-3961, 1993
A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range
E Ahmad, MR Karim, SB Hafiz, CL Reynolds, Y Liu, S Iyer
Scientific reports 7 (1), 1-12, 2017
Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy
PK Kasanaboina, E Ahmad, J Li, CL Reynolds Jr, Y Liu, S Iyer
Applied Physics Letters 107 (10), 103111, 2015
Nitrogen incorporation and optical studies of single quantum well heterostructures
K Nunna, S Iyer, L Wu, J Li, S Bharatan, X Wei, RT Senger, KK Bajaj
Journal of Applied Physics 102 (5), 053106, 2007
Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy
PK Kasanaboina, SK Ojha, SU Sami, CL Reynolds, Y Liu, S Iyer
Semiconductor Science and Technology 30 (10), 105036, 2015
The properties of radio frequency sputtered transparent and conducting ZnO: F films on polyethylene naphthalate substrate
A Bowen, J Li, J Lewis, K Sivaramakrishnan, TL Alford, S Iyer
Thin Solid Films 519 (6), 1809-1816, 2011
Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide
K Sivaramakrishnan, AT Ngo, S Iyer, TL Alford
Journal of Applied Physics 105 (6), 063525, 2009
Tailoring of GaAs/GaAsSb core-shell structured nanowires for IR photodetector applications
PK Kasanaboina, SK Ojha, SU Sami, L Reynolds Jr, Y Liu, S Iyer
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling …, 2015
MBE growth and properties of GaAsSbN/GaAs single quantum wells
L Wu, S Iyer, K Nunna, J Li, S Bharatan, W Collis, K Matney
Journal of crystal growth 279 (3-4), 293-302, 2005
Effects of deposition parameters on the electrical and mechanical properties of indium tin oxide films on polyethylene napthalate substrates deposited by radio frequency …
SK Bhagat, H Han, Y Zoo, J Lewis, S Grego, K Lee, S Iyer, TL Alford
Thin Solid Films 516 (12), 4064-4069, 2008
Nanoscience and Nanoengineering: Advances and Applications
AD Kelkar, DJC Herr, JG Ryan
CRC Press, 2014
Pitch-Induced Bandgap Tuning in Self-Catalyzed Growth of Patterned GaAsSb Axial and GaAs/GaAsSb Core-Shell Nanowires using MBE
M Sharma, MR Karim, P Kasanaboina, J Li, S Iyer
Crystal Growth & Design 17, 730-737, 2017
Te Incorporation in GaAs1-xSbx Nanowires and P-I-N Axial Structure
E Ahmad, P Kasanaboina, MR Karim, M Sharma, L Reynolds, Y Liu, ...
Semiconductor Science and Technology 31, 125001 (8 pp), 2016
The system can't perform the operation now. Try again later.
Articles 1–20