On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
434 2008 Effective electrical passivation of Ge(100) for high- A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 082904, 2007
334 2007 Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
311 2008 Characterization of defects in 9.7% efficient Cu2 ZnSnSe4 -CdS-ZnO solar cells G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...
Applied Physics Letters 103 (16), 163904, 2013
247 2013 Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium A Satta, E Simoen, T Clarysse, T Janssens, A Benedetti, B De Jaeger, ...
Applied Physics Letters 87 (17), 172109, 2005
169 2005 The IMEC clean: A new concept for particle and metal removal on Si surfaces M Meuris, PW Mertens, A Opdebeeck, HF Schmidt, M Depas, G Vereecke, ...
Solid State Technology 38 (7), 109-113, 1995
163 1995 Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
150 2007 High performance Ge pMOS devices using a Si-compatible process flow P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
147 2006 Ion-implantation issues in the formation of shallow junctions in germanium E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ...
Materials science in semiconductor processing 9 (4-5), 634-639, 2006
141 2006 Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n-and p-FETs on Ge-On-Insulator substrates B De Jaeger, R Bonzom, F Leys, O Richard, J Van Steenbergen, ...
Microelectronic engineering 80, 26-29, 2005
140 2005 Capacitance-voltage characterization of G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 183504, 2008
135 2008 P implantation doping of Ge: Diffusion, activation, and recrystallization A Satta, T Janssens, T Clarysse, E Simoen, M Meuris, A Benedetti, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
135 2006 Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied Physics Letters 91 (13), 133510, 2007
134 2007 Method and apparatus for removing a liquid from a surface of a rotating substrate P Mertens, M Meuris, M Heyns
US Patent 6,491,764, 2002
134 2002 Deposition of S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
133 2004 Record ION /IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
132 2008 Atomic layer deposition of hafnium oxide on germanium substrates A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 064104, 2005
128 2005 Ge dangling bonds at the M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’ Ev, ...
Applied Physics Letters 93 (16), 161909, 2008
127 2008 Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns
Microelectronic Engineering 86 (7-9), 1554-1557, 2009
119 2009 High-performance deep submicron Ge pMOSFETs with halo implants G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ...
IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007
118 2007 