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Chelyadinskii, A.R. (Челядинский Алексей Романович)
Chelyadinskii, A.R. (Челядинский Алексей Романович)
Belarusian State University, Physics Department, 4 Nezavisimosti Av., 220030 Minsk, Belarus
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Дефектно-примесная инженерия в имплантированном кремнии
АР Челядинский, ФФ Комаров
Успехи физических наук 173 (8), 813-846, 2003
622003
Defect-impurity engineering in implanted silicon
AR Chelyadinskii, FF Komarov
Physics-Uspekhi 46 (8), 789, 2003
492003
Defect production in silicon irradiated with 5.68 GeV Xe ions
VS Varichenko, AM Zaitsev, NM Kazutchits, AR Chelyadinskii, NM Penina, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
371996
Ya. I. Latushko, WR Fahrner
VS Varichenko, AM Zaitsev, NM Kazutchits, AR Chelyadinskii, NM Penina, ...
Nucl. Instrum. Methods Phys. Res. B 107, 268, 1996
37*1996
Interstitial type defects in ion implanted silicon
NI Berezhnov, VF Stelmakh, AR Chelyadinskii
physica status solidi (a) 78 (2), K121-K125, 1983
321983
Deformation of porous silicon lattice caused by absorption/desorption processes
AR Chelyadinsky, AM Dorofeev, NM Kazuchits, S La Monica, ...
Journal of The Electrochemical Society 144 (4), 1463-1468, 1997
281997
On the problem of Watkins substitution and migration of silicon atoms in silicon
NI Berezhnov, AR Chelyadinskii, M Jadan, YR Suprun-Belevich
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993
251993
Damage profiles in ion implanted silicon
VD Tkachev, G Hölzer, AR Chelyadinskii
physica status solidi (a) 85 (1), K43-K46, 1984
241984
Ионная имплантация примесей в монокристаллы кремния: эффективность метода и радиационные нарушения
ВС Вавилов, АР Челядинский
Успехи физических наук 165 (3), 347-358, 1995
231995
Diffusion of implanted nickel in diamond
AR Filipp, VV Tkachev, VS Varichenko, AM Zaitsev, AR Chelyadinskii, ...
Diamond and Related Materials 1 (2), 271-276, 1992
211992
Impurity ion implantation into silicon single crystals: efficiency and radiation damage
VS Vavilov, AR Chelyadinskii
Physics-Uspekhi 38 (3), 333, 1995
181995
Charge States of Interstitial Defects in lmplanted Silicon and Their Annealing Temperatures
M Jadan, NI Berezhnov, AR Chelyadinskii
physica status solidi (b) 189 (1), K1-K4, 1995
171995
Radiation defects and electrical properties of silicon layers containing Sb and As implanted with Si+ ions
OJ Araika, AR Chelyadinskii, VA Dravin, YR Suprun-Belevich, VP Tolstikh
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993
131993
EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions
VS Varichenko, AM Zaitsev, JKN Lindner, R Domres, NM Penina, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1994
121994
Diffusion of ion‐implanted phosphorus in silicon
AR Chelyadinskii, HI Taher
physica status solidi (a) 142 (2), 331-338, 1994
121994
Effect of Radiation Defects and Elastic Incompatibility Stresses on the Electrical Activation and Diffusion of Boron in Ion‐Implanted Silicon
VF Stelmakh, YR Sutrtin‐belevich, AR Chelyadinskii
physica status solidi (a) 112 (1), 381-384, 1989
111989
Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions
AR Chelyadinskii, VS Varichenko, AM Zaitsev
Physics of the Solid State 40 (9), 1478-1481, 1998
101998
Changes in the Lattice Period of Si Caused by Neutron Irradiation
AR Chelyadinskii
Soviet Physics-Solid State 18 (3), 506-507, 1976
101976
Diffusion of boron implanted into silicon
VF Stelmakh, YR Suprun‐Belevich, VD Tkachev, AR Chelyadinskii
physica status solidi (a) 89 (1), K45-K49, 1985
81985
X-RAY-DIFFRACTION STUDY OF SILICON IMPLANTATED WITH BORON IONS
VF Stelmakh, VD Tkachev, AR Chelyadinskii
FIZIKA TVERDOGO TELA 20 (7), 2196-2200, 1978
81978
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