Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy W Guo, M Zhang, A Banerjee, P Bhattacharya
Nano letters 10 (9), 3355-3359, 2010
582 2010 InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon W Guo, A Banerjee, P Bhattacharya, BS Ooi
Applied Physics Letters 98 (19), 2011
183 2011 A InGaN/GaN quantum dot green (λ= 524 nm) laser M Zhang, A Banerjee, CS Lee, JM Hinckley, P Bhattacharya
Applied Physics Letters 98 (22), 2011
96 2011 InGaN/GaN Quantum Dot Red T Frost, A Banerjee, K Sun, SL Chuang, P Bhattacharya
IEEE Journal of Quantum Electronics 49 (11), 923-931, 2013
90 2013 Misorientation defects in coalesced self-catalyzed GaN nanowires KA Grossklaus, A Banerjee, S Jahangir, P Bhattacharya, JM Millunchick
Journal of crystal growth 371, 142-147, 2013
60 2013 800 Gbps fully integrated silicon photonics transmitter for data center applications H Yu, D Patel, W Liu, Y Malinge, P Doussiere, W Lin, S Gupta, ...
Optical Fiber Communication Conference, M2D. 7, 2022
56 2022 Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions M Zhang, P Bhattacharya, W Guo, A Banerjee
Applied Physics Letters 96 (13), 2010
56 2010 Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts H Kum, J Heo, S Jahangir, A Banerjee, W Guo, P Bhattacharya
Applied Physics Letters 100 (18), 2012
50 2012 Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ= 420 nm) on c-plane GaN substrate A Banerjee, T Frost, E Stark, P Bhattacharya
Applied Physics Letters 101 (4), 2012
37 2012 Polariton Bose–Einstein condensate at room temperature in an Al (Ga) N nanowire–dielectric microcavity with a spatial potential trap A Das, P Bhattacharya, J Heo, A Banerjee, W Guo
Proceedings of the National Academy of Sciences 110 (8), 2735-2740, 2013
30 2013 Carrier collection losses in amorphous silicon and amorphous silicon–germanium alloy solar cells A Banerjee, X Xu, J Yang, S Guha
Applied physics letters 67 (20), 2975-2977, 1995
30 1995 Spin relaxation in InGaN quantum disks in GaN nanowires A Banerjee, F Dogan, J Heo, A Manchon, W Guo, P Bhattacharya
Nano letters 11 (12), 5396-5400, 2011
29 2011 Barrier height of Pt–InxGa1− xN (≤ x≤ 0.5) nanowire Schottky diodes W Guo, A Banerjee, M Zhang, P Bhattacharya
Applied Physics Letters 98 (18), 2011
25 2011 Small-signal modulation and differential gain of red-emitting (λ= 630 nm) InGaN/GaN quantum dot lasers T Frost, A Banerjee, P Bhattacharya
Applied Physics Letters 103 (21), 2013
22 2013 Carrier lifetimes in green emitting InGaN/GaN disks‐in‐nanowire and characteristics of green light emitting diodes S Jahangir, A Banerjee, P Bhattacharya
physica status solidi c 10 (5), 812-815, 2013
20 2013 Dynamic polariton condensation in a single GaN nanowire-dielectric microcavity A Das, P Bhattacharya, A Banerjee, M Jankowski
Physical Review B 85 (19), 195321, 2012
15 2012 Fuzzy logic based content protection for image resizing by seam carving S Subramanian, K Kumar, BP Mishra, A Banerjee, D Bhattacharya
2008 IEEE Conference on Soft Computing in Industrial Applications, 78-83, 2008
15 2008 Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors L Shao, M Zhang, A Banerjee, P Bhattacharya, KP Pipe
Applied Physics Letters 99 (24), 2011
14 2011 Temperature-dependent measurement of Auger recombination in In0. 40Ga0. 60N/GaN red-emitting (λ= 630 nm) quantum dots T Frost, A Banerjee, S Jahangir, P Bhattacharya
Applied Physics Letters 104 (8), 2014
12 2014 InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy A Banerjee, T Frost, S Jahangir, E Stark, P Bhattacharya
Journal of crystal growth 378, 566-570, 2013
9 2013 
Wei GuoUniversity of Massachusetts LowellGeverifieerd e-mailadres voor uml.edu
