| Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays CH Huang, TS Chou, JS Huang, SM Lin, YL Chueh Scientific reports 7 (1), 1-9, 2017 | 53 | 2017 |
| Direct formation of large-scale multi-layered germanene on Si substrate HS Tsai, YZ Chen, H Medina, TY Su, TS Chou, YH Chen, YL Chueh, ... Physical Chemistry Chemical Physics 17 (33), 21389-21393, 2015 | 45 | 2015 |
| Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, S Ganschow, P Seyidov, K Irmscher, M Pietsch, TS Chou, ... Applied Physics Letters 120 (15), 2022 | 39 | 2022 |
| Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ... Journal of Physics D: Applied Physics 54 (3), 034003, 2020 | 39 | 2020 |
| Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, TTV Tran, K Irmscher, ... AIP Advances 11 (11), 2021 | 31 | 2021 |
| Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson ACS nano 16 (8), 11988-11997, 2022 | 26 | 2022 |
| SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ... Applied Physics Letters 120 (11), 2022 | 19 | 2022 |
| Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films TS Chou, S Bin Anooz, R Grüneberg, N Dropka, J Rehm, TTV Tran, ... Applied Physics Letters 121 (3), 2022 | 11 | 2022 |
| High-mobility 4 µm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, J Rehm, TTV Tran, ... Japanese Journal of Applied Physics 62, SF1004, 2023 | 10 | 2023 |
| Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson APL Materials 10 (9), 2022 | 10 | 2022 |
| Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire TS Chou, SB Anooz, R Grüneberg, N Dropka, W Miller, TTV Tran, J Rehm, ... Journal of Crystal Growth 592, 126737, 2022 | 9 | 2022 |
| Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, M Pietsch, J Rehm, ... Applied Physics Letters 122 (5), 2023 | 8 | 2023 |
| Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach TS Chou, S Bin Anooz, R Grüneberg, K Irmscher, N Dropka, J Rehm, ... Crystals 12 (1), 8, 2021 | 8 | 2021 |
| Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory P Seyidov, JB Varley, Z Galazka, TS Chou, A Popp, A Fiedler, K Irmscher APL Materials 10 (11), 2022 | 7 | 2022 |
| AIP Adv. 11, 115323 (2021) TS Chou, P Seyidov, SB Anooz, R Grüneberg, TTV Tran, K Irmscher, ... | 7 | |
| Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing K Tetzner, A Thies, P Seyidov, TS Chou, J Rehm, I Ostermay, Z Galazka, ... Journal of Vacuum Science & Technology A 41 (4), 2023 | 6 | 2023 |
| Bulk single crystals and physical properties of β-(AlxGa1− x) 2O3 (x= 0–0.35) grown by the Czochralski method Z Galazka, A Fiedler, A Popp, S Ganschow, A Kwasniewski, P Seyidov, ... Journal of Applied Physics 133 (3), 2023 | 6 | 2023 |
| Refractory metal-based ohmic contacts on β-Ga2O3 using TiW K Tetzner, R Schewski, A Popp, SB Anooz, TS Chou, I Ostermay, ... APL Materials 10 (7), 2022 | 5 | 2022 |
| Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill‐Posed Inverse Problems using Images and Numerical Data N Dropka, M Holena, C Thieme, TS Chou Crystal Research and Technology 58 (11), 2300125, 2023 | 4 | 2023 |
| Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm− 1 K Tetzner, M Klupsch, A Popp, SB Anooz, TS Chou, Z Galazka, K Ickert, ... Japanese Journal of Applied Physics 62 (SF), SF1010, 2023 | 4 | 2023 |
Andreas PoppLeibniz-Insitut für KristallzüchtungVerified email at ikz-berlin.de
