Alireza Alian
Alireza Alian
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A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied toand InP Capacitors
G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang
IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate …
LK Chu, C Merckling, A Alian, J Dekoster, J Kwo, M Hong, M Caymax, ...
Applied Physics Letters 99 (4), 042908, 2011
Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ...
2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014
Review of electrical characterization of ultra-shallow junctions with micro four-point probes
DH Petersen, O Hansen, TM Hansen, P Bøggild, R Lin, D Kjær, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ ev, TY Hoffmann, ...
Journal of Applied Physics 109 (7), 073719, 2011
InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
A Alian, Y Mols, CCM Bordallo, D Verreck, A Verhulst, A Vandooren, ...
Applied Physics Letters 109 (24), 243502, 2016
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
J Franco, B Kaczer, N Waldron, PJ Roussel, A Alian, MA Pourghaderi, Z Ji, ...
2014 IEEE International Electron Devices Meeting, 20.2. 1-20.2. 4, 2014
Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices
A Alian, MA Pourghaderi, Y Mols, M Cantoro, T Ivanov, N Collaert, ...
2013 IEEE International Electron Devices Meeting, 16.6. 1-16.6. 4, 2013
Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
N Collaert, A Alian, H Arimura, G Boccardi, G Eneman, J Franco, T Ivanov, ...
Microelectronic Engineering 132, 218-225, 2015
H2O-and O3-based atomic layer deposition of high-κ dielectric films on GeO2 passivation layers
A Delabie, A Alian, F Bellenger, M Caymax, T Conard, A Franquet, ...
Journal of the Electrochemical Society 156 (10), G163, 2009
Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
A Alian, G Brammertz, C Merckling, A Firrincieli, WE Wang, HC Lin, ...
Applied Physics Letters 99 (11), 112114, 2011
IEEE Int. Electron Devices Meet
HY Lee, PS Chen, TY Wu, YS Chen, CC Wang, PJ Tzeng, CH Lin, F Chen, ...
Tech. Dig 1, 2008
AC transconductance dispersion (ACGD): A method to profile oxide traps in MOSFETs without body contact
X Sun, S Cui, A Alian, G Brammertz, C Merckling, D Lin, TP Ma
IEEE electron device letters 33 (3), 438-440, 2012
Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
A Alian, J Franco, A Vandooren, Y Mols, A Verhulst, S El Kazzi, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2015
Silicon and selenium implantation and activation in In0. 53Ga0. 47As under low thermal budget conditions
A Alian, G Brammertz, N Waldron, C Merckling, G Hellings, HC Lin, ...
Microelectronic engineering 88 (2), 155-158, 2011
BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities
G Groeseneken, J Franco, M Cho, B Kaczer, M Toledano-Luque, ...
2014 IEEE International Electron Devices Meeting, 34.4. 1-34.4. 4, 2014
Oxide Trapping in the InGaAs– System and the Role of Sulfur in Reducing the Trap Density
A Alian, G Brammertz, R Degraeve, M Cho, C Merckling, D Lin, WE Wang, ...
IEEE electron device letters 33 (11), 1544-1546, 2012
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