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Stanko Tomic
Stanko Tomic
FInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of Surrey
Verified email at salford.ac.uk
Title
Cited by
Cited by
Year
Dilute nitride semiconductors
Elsevier, 2004
308*2004
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002
2012002
Tight-binding and k· p models for the electronic structure of Ga (In) NAs and related alloys
EP O'Reilly, A Lindsay, S Tomić, M Kamal-Saadi
Semiconductor science and technology 17 (8), 870, 2002
1772002
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003
1692003
Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design
S Tomić, TS Jones, NM Harrison
Applied physics letters 93 (26), 263105, 2008
1552008
The group III–V's semiconductor energy gaps predicted using the B3LYP hybrid functional
S Tomić, B Montanari, NM Harrison
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 2125-2127, 2008
1552008
Physics and Applications of Dilute Nitrides
Taylor & Francis, 2004
132*2004
Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays
S Tomić
Physical Review B 82 (19), 195321, 2010
1302010
Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaN x As 1− x∕ GaAs quantum wells
S Tomić, EP O’Reilly, PJ Klar, H Grüning, W Heimbrodt, WM Chen, ...
Physical Review B 69 (24), 245305, 2004
1282004
Second-order piezoelectricity in wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, MA Migliorato, S Tomić
Physical Review B 84 (8), 085211, 2011
1132011
Erratum: Second-order piezoelectricity in wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, M Migliorato, S Tomic
Physical Review B (PRB) 84 (15), 159902, 2011
113*2011
New tools for the analysis of EXAFS: the DL EXCURV package
S Tomic, BG Searle, A Wander, NM Harrison, AJ Dent, JFW Mosselmans, ...
Council for the Central Laboratory of the Research Councils, 2005
110*2005
Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules
T Sogabe, Y Shoji, M Ohba, K Yoshida, R Tamaki, HF Hong, CH Wu, ...
Scientific reports 4 (1), 1-7, 2014
1052014
Parallel multi-band k· p code for electronic structure of zinc blend semiconductor quantum dots
S Tomić, AG Sunderland, IJ Bush
Journal of Materials Chemistry 16 (20), 1963-1972, 2006
972006
Electronic structure of InGaAsN/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies
SA Choulis, TJC Hosea, S Tomić, M Kamal-Saadi, AR Adams, EP O’Reilly, ...
Physical Review B 66 (16), 165321, 2002
862002
Defect physics of CuGaS 2
CL Bailey, L Liborio, G Mallia, S Tomić, NM Harrison
Physical Review B 81 (20), 205214, 2010
712010
Quantum dot solar cells
J Wu, ZM Wang
Springer New York, 2014
702014
Electronic and optical properties of reduced graphene oxide
M Lundie, Ž Šljivančanin, S Tomić
Journal of Materials Chemistry C 3 (29), 7632-7641, 2015
622015
Gain characteristics of ideal dilute nitride quantum well lasers
S Tomić, EP O'Reilly
Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 1102-1105, 2002
602002
Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅ p theory and configuration-interaction method
S Tomić, N Vukmirović
Physical Review B 79 (24), 245330, 2009
58*2009
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