Follow
Fan Ye
Fan Ye
Verified email at google.com
Title
Cited by
Cited by
Year
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ...
Nature nanotechnology 10 (6), 534-540, 2015
13522015
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ...
ACS nano 9 (7), 7019-7026, 2015
4462015
Environmental instability and degradation of single-and few-layer WTe2 nanosheets in ambient conditions
F Ye, J Lee, J Hu, Z Mao, J Wei, PXL Feng
arXiv preprint arXiv:1608.00097, 2016
1192016
Thousands of conductance levels in memristors integrated on CMOS
M Rao, H Tang, J Wu, W Song, M Zhang, W Yin, Y Zhuo, F Kiani, B Chen, ...
Nature 615 (7954), 823-829, 2023
1062023
Electrothermally tunable graphene resonators operating at very high temperature up to 1200 K
F Ye, J Lee, PXL Feng
Nano Letters 18 (3), 1678-1685, 2018
782018
Single-and few-layer WTe 2 and their suspended nanostructures: Raman signatures and nanomechanical resonances
J Lee, F Ye, Z Wang, R Yang, J Hu, Z Mao, J Wei, PXL Feng
Nanoscale 8 (15), 7854-7860, 2016
592016
Atomic layer MoS 2-graphene van der Waals heterostructure nanomechanical resonators
F Ye, J Lee, PXL Feng
Nanoscale 9 (46), 18208-18215, 2017
562017
Ultrawide frequency tuning of atomic layer van der Waals heterostructure electromechanical resonators
F Ye, A Islam, T Zhang, PXL Feng
Nano Letters 21 (13), 5508-5515, 2021
352021
Structure and properties of layer-by-layer self-assembled chitosan/lignosulfonate multilayer film
H Luo, Q Shen, F Ye, YF Cheng, M Mezgebe, RJ Qin
Materials Science and Engineering: C 32 (7), 2001-2006, 2012
332012
Gate-tuned temperature in a hexagonal boron nitride-encapsulated 2-D semiconductor device
Y Li, F Ye, J Xu, W Zhang, PXL Feng, X Zhang
IEEE Transactions on Electron Devices 65 (10), 4068-4072, 2018
202018
Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition
F Ye, F Kiani, Y Huang, Q Xia
Advanced Materials 35 (37), 2204778, 2023
182023
Small angle x-ray scattering of iron oxide nanoparticle monolayers formed on a liquid surface
D Zhang, C Lu, J Hu, SW Lee, F Ye, IP Herman
The Journal of Physical Chemistry C 119 (19), 10727-10733, 2015
162015
Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for …
N He, F Ye, J Liu, T Sun, X Wang, W Hou, W Shao, X Wan, Y Tong, F Xu, ...
Advanced Electronic Materials 9 (3), 2201038, 2023
132023
Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics
F Ye, Q Liu, B Xu, PXL Feng, X Zhang
Small 19 (12), 2205726, 2023
102023
Glowing graphene nanoelectromechanical resonators at ultra-high temperature up to 2650K
F Ye, J Lee, PXL Feng
2018 IEEE international Electron devices meeting (IEDM), 4.4. 1-4.4. 4, 2018
92018
From memristive devices to neuromorphic systems
Y Huang, F Kiani, F Ye, Q Xia
Applied Physics Letters 122 (11), 2023
62023
Identification and classification of exfoliated graphene flakes from microscopy images using a hierarchical deep convolutional neural network
S Mahjoubi, F Ye, Y Bao, W Meng, X Zhang
Engineering Applications of Artificial Intelligence 119, 105743, 2023
62023
Very high interfacial thermal conductance in fully hBN-encapsulated MoS2 van der Waals heterostructure
F Ye, Q Liu, B Xu, PXL Feng, X Zhang
arXiv preprint arXiv:2102.05239, 2021
62021
Very-wide electrothermal tuning of graphene nanoelectromechanical resonators
F Ye, J Lee, PXL Feng
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems …, 2017
62017
Thousands of conductance levels in memristors monolithically integrated on CMOS
J Yang, M Rao, H Tang, JB Wu, W Song, M Zhang, W Yin, Y Zhuo, F Kiani, ...
52022
The system can't perform the operation now. Try again later.
Articles 1–20