Cheng Zhang
Cheng Zhang
Post-doct Research Associate at University of Tennessee/Oak Ridge National Laboratory
Verified email at
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Chiral magnetic effect in ZrTe5
Q Li, DE Kharzeev, C Zhang, Y Huang, I Pletikosić, AV Fedorov, ...
Nature Physics 12 (6), 550-554, 2016
Optical spectroscopy study of the three-dimensional Dirac semimetal ZrTe 5
RY Chen, SJ Zhang, JA Schneeloch, C Zhang, Q Li, GD Gu, NL Wang
Physical Review B 92 (7), 075107, 2015
Optimizing the superconducting transition temperature and upper critical field of Sn 1− x In x Te
RD Zhong, JA Schneeloch, XY Shi, ZJ Xu, C Zhang, JM Tranquada, Q Li, ...
Physical Review B 88 (2), 020505, 2013
Correlating size and composition-dependent effects with magnetic, mossbauer, and pair distribution function measurements in a family of catalytically active ferrite nanoparticles
AL Tiano, GC Papaefthymiou, CS Lewis, J Han, C Zhang, Q Li, C Shi, ...
Chemistry of Materials 27 (10), 3572-3592, 2015
Spectroscopic evidence for bulk-band inversion and three-dimensional massive Dirac fermions in ZrTe5
ZG Chen, RY Chen, RD Zhong, J Schneeloch, C Zhang, Y Huang, F Qu, ...
Proceedings of the National Academy of Sciences 114 (5), 816-821, 2017
High-performance multilayer WSe 2 field-effect transistors with carrier type control
PR Pudasaini, A Oyedele, C Zhang, MG Stanford, N Cross, AT Wong, ...
Nano Research 11 (2), 722-730, 2018
Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5
H Chi, C Zhang, G Gu, DE Kharzeev, X Dai, Q Li
New Journal of Physics 19 (1), 015005, 2017
A route for a strong increase of critical current in nanostrained iron-based superconductors
T Ozaki, L Wu, C Zhang, J Jaroszynski, W Si, J Zhou, Y Zhu, Q Li
Nature communications 7 (1), 1-9, 2016
Band structure engineering and thermoelectric properties of charge-compensated filled skutterudites
X Shi, J Yang, L Wu, JR Salvador, C Zhang, WL Villaire, D Haddad, ...
Scientific reports 5 (1), 1-11, 2015
Grain boundary junctions of FeSe0.5Te0.5 thin films on SrTiO3 bi-crystal substrates
W Si, C Zhang, X Shi, T Ozaki, J Jaroszynski, Q Li
Applied Physics Letters 106 (3), 032602, 2015
“Smart” nanomaterials for cancer therapy
XH Li, C Zhang, L Le Guyader, CY Chen
Science China Chemistry 53 (11), 2241-2249, 2010
Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb 1− x Sn x Te
R Zhong, X He, JA Schneeloch, C Zhang, T Liu, I Pletikosić, T Yilmaz, ...
Physical Review B 91 (19), 195321, 2015
Discovery of Superconductivity in Hard Hexagonal ε-NbN
Y Zou, X Qi, C Zhang, S Ma, W Zhang, Y Li, T Chen, X Wang, Z Chen, ...
Scientific reports 6 (1), 1-9, 2016
High-resolution laser-induced graphene. Flexible electronics beyond the visible limit
MG Stanford, C Zhang, JD Fowlkes, A Hoffman, IN Ivanov, PD Rack, ...
ACS applied materials & interfaces 12 (9), 10902-10907, 2020
Magneto-optical characterizations of FeTe0. 5Se0. 5 thin films with critical current density over 1 MA cm− 2
Y Sun, Y Tsuchiya, S Pyon, T Tamegai, C Zhang, T Ozaki, Q Li
Superconductor Science and Technology 28 (1), 015010, 2014
Enhanced low-energy magnetic excitations via suppression of the itinerancy in Fe 0.98− z Cu z Te 0.5 Se 0.5
J Wen, S Li, Z Xu, C Zhang, M Matsuda, O Sobolev, JT Park, ...
Physical Review B 88 (14), 144509, 2013
Tuning the electrical properties of WSe2 via O2 plasma oxidation: towards lateral homojunctions
AN Hoffman, MG Stanford, MG Sales, C Zhang, IN Ivanov, SJ McDonnell, ...
2D Materials 6 (4), 045024, 2019
Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe2 Transistors
AN Hoffman, MG Stanford, C Zhang, IN Ivanov, AD Oyedele, MG Sales, ...
ACS applied materials & interfaces 10 (42), 36540-36548, 2018
Electron and hole contributions to normal-state transport in the superconducting system
C Zhang, XG He, H Chi, R Zhong, W Ku, G Gu, JM Tranquada, Q Li
Physical Review B 98 (5), 054503, 2018
Doubling the critical current density in superconducting FeSe0.5Te0.5 thin films by low temperature oxygen annealing
C Zhang, W Si, Q Li
Applied Physics Letters 109 (20), 202601, 2016
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