Yu Cao
Yu Cao
Qorvo
Verified email at qorvo.com
Title
Cited by
Cited by
Year
High-mobility window for two-dimensional electron gases at ultrathin heterojunctions
Y Cao, D Jena
Applied physics letters 90 (18), 182112, 2007
3032007
Heat‐transport mechanisms in superlattices
YK Koh, Y Cao, DG Cahill, D Jena
Advanced Functional Materials 19 (4), 610-615, 2009
2202009
AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
1872008
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
1562015
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
1352012
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
1082011
600 V/ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
R Li, Y Cao, M Chen, R Chu
IEEE Electron Device Letter 37 (11), 1466, 2016
1012016
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
Y Cao, R Chu, R Li, M Chen, R Chang, B Hughes
Applied Physics Letters 108, 062103, 2016
1002016
Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand
DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ...
IEEE electron device letters 34 (8), 969-971, 2013
892013
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
892011
An experimental demonstration of GaN CMOS technology
R Chu, Y Cao, M Chen, R Li, D Zehnder
IEEE Electron Device Letters 37 (3), 269-271, 2016
822016
220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs
R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
822011
Compositional modulation and optical emission in AlGaN epitaxial films
M Gao, ST Bradley, Y Cao, D Jena, Y Lin, SA Ringel, J Hwang, WJ Schaff, ...
Journal of Applied physics 100 (10), 103512, 2006
712006
Quaternary Barrier InAlGaN HEMTs Withof 230/300 GHz
R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
632013
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
612013
Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties
F Qian, M Brewster, SK Lim, Y Ling, C Greene, O Laboutin, JW Johnson, ...
Nano letters 12 (6), 3344-3350, 2012
572012
Polarization-engineered removal of buffer leakage for GaN transistors
Y Cao, T Zimmermann, H Xing, D Jena
Applied Physics Letters 96 (4), 042102, 2010
522010
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
492012
Impact ofPassivation Thickness in Highly Scaled GaN HEMTs
DS Lee, O Laboutin, Y Cao, W Johnson, E Beam, A Ketterson, M Schuette, ...
IEEE electron device letters 33 (7), 976-978, 2012
482012
Threshold Voltage Control in HEMTs by Work-Function Engineering
G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ...
IEEE electron device letters 31 (9), 954-956, 2010
482010
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