Ashok Sedhain
Ashok Sedhain
Principal Process Engineer Metrology, Globalfoundries
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Year
Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays
J Liu, J Li, A Sedhain, J Lin, H Jiang
The Journal of Physical Chemistry C 112 (44), 17127-17132, 2008
1292008
Nature of deep center emissions in GaN
A Sedhain, J Li, JY Lin, HX Jiang
Applied Physics Letters 96 (15), 151902, 2010
952010
Electrical and optical properties of p-type InGaN
BN Pantha, A Sedhain, J Li, JY Lin, HX Jiang
Applied Physics Letters 95, 261904, 2009
762009
Handbook of luminescent semiconductor materials
L Bergman, JL McHale
CRC Press, 2011
712011
The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates
A Sedhain, L Du, JH Edgar, JY Lin, HX Jiang
Applied Physics Letters 95, 262104, 2009
572009
High mobility InN epilayers grown on AlN epilayer templates
N Khan, A Sedhain, J Li, JY Lin, HX Jiang
Applied Physics Letters 92, 172101, 2008
492008
Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods
XH Ji, SP Lau, SF Yu, HY Yang, TS Herng, A Sedhain, JY Lin, HX Jiang, ...
Applied physics letters 90, 193118, 2007
432007
Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN
A Sedhain, JY Lin, HX Jiang
Applied Physics Letters 100 (22), 221107, 2012
382012
Mg acceptor level in InN epilayers probed by photoluminescence
N Khan, N Nepal, A Sedhain, JY Lin, HX Jiang
Applied physics letters 91, 012101, 2007
362007
TM Al tahtamouni, JY Lin, HX Jiang, Z. Gu, and JH Edgar
A Sedhain, N Nepal, ML Nakarmi
Appl. Phys. Lett 93, 041905, 2008
342008
Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant
TM Al Tahtamouni, A Sedhain, JY Lin, HX Jiang
Applied Physics Letters 92 (9), 092105, 2008
322008
Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
IW Feng, J Li, A Sedhain, JY Lin, HX Jiang, J Zavada
Applied Physics Letters 96, 031908, 2010
282010
Probing the relationship between structural and optical properties of Si-doped AlN
BN Pantha, A Sedhain, J Li, JY Lin, HX Jiang
Applied Physics Letters 96, 131906, 2010
252010
Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers
N Nepal, JM Zavada, R Dahal, C Ugolini, A Sedhain, JY Lin, HX Jiang
Applied Physics Letters 95, 022510, 2009
242009
Probing exciton-phonon interaction in AlN epilayers by photoluminescence
A Sedhain, J Li, JY Lin, HX Jiang
Applied Physics Letters 95, 061106, 2009
232009
Growth and photoluminescence studies of a-plane AlN∕ AlGaN quantum wells
TM Al Tahtamouni, A Sedhain, JY Lin, HX Jiang
Applied physics letters 90, 221105, 2007
232007
Beryllium acceptor binding energy in AlN
A Sedhain, TM Al Tahtamouni, J Li, JY Lin, HX Jiang
Applied Physics Letters 93 (14), 141104, 2008
212008
An N-myristoylated protein kinase C-α pseudosubstrate peptide that functions as a multidrug resistance reversal agent in human breast cancer cells is not a P-glycoprotein substrate
PJ Bergman, KR Gravitt, CA O’Brian
Cancer chemotherapy and pharmacology 40 (5), 453-456, 1997
21*1997
Formation energy of optically active Er3+ centers in Er doped GaN
C Ugolini, IW Feng, A Sedhain, JY Lin, HX Jiang, JM Zavada
Applied Physics Letters 101 (5), 051114, 2012
142012
Valence band structure of AlN probed by photoluminescence
A Sedhain, JY Lin, HX Jiang
Applied Physics Letters 92, 041114, 2008
112008
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