| MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 145 | 2019 |
| Probing charge transport and background doping in MOCVD grown (010) β‐Ga2O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters, 2020 | 102 | 2020 |
| Sec‐eliminating the SARS‐CoV‐2 by AlGaN based high power deep ultraviolet light source S Liu, W Luo, D Li, Y Yuan, W Tong, J Kang, Y Wang, D Li, X Rong, ... Advanced functional materials 31 (7), 2008452, 2021 | 74 | 2021 |
| Deep ultraviolet light source from ultrathin GaN/AlN MQW structures with output power over 2 watt Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ... Advanced Optical Materials 7 (10), 1801763, 2019 | 58 | 2019 |
| Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells L Lymperakis, T Schulz, C Freysoldt, M Anikeeva, Z Chen, X Zheng, ... Physical Review Materials 2 (1), 011601, 2018 | 56 | 2018 |
| Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on sapphire D Wang, J Su, Z Chen, T Wang, L Yang, B Sheng, S Lin, X Rong, P Wang, ... Advanced Electronic Materials 5 (2), 1800651, 2019 | 43 | 2019 |
| Deep‐ultraviolet micro‐LEDs exhibiting high output power and high modulation bandwidth simultaneously D Li, S Liu, Z Qian, Q Liu, K Zhou, D Liu, S Sheng, B Sheng, F Liu, Z Chen, ... Advanced Materials 34 (19), 2109765, 2022 | 42 | 2022 |
| β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy J Wei, K Kim, F Liu, P Wang, X Zheng, Z Chen, D Wang, A Imran, X Rong, ... Journal of Semiconductors 40 (1), 012802, 2019 | 40 | 2019 |
| Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ... Journal of Applied Physics 127 (21), 215707, 2020 | 31 | 2020 |
| Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth X Sun, P Wang, B Sheng, T Wang, Z Chen, K Gao, M Li, J Zhang, W Ge, ... Quantum Engineering 1 (3), e20, 2019 | 31 | 2019 |
| Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs Z Chen, X Zheng, Z Li, P Wang, X Rong, T Wang, X Yang, F Xu, Z Qin, ... Applied Physics Letters 109 (6), 2016 | 28 | 2016 |
| Design and fabrication of vertical GaN pn diode with step-etched triple-zone junction termination extension HS Lee, Y Zhang, Z Chen, MW Rahman, H Zhao, S Rajan IEEE Transactions on Electron Devices 67 (9), 3553-3557, 2020 | 26 | 2020 |
| High-electron-mobility InN epilayers grown on silicon substrate H Liu, X Wang, Z Chen, X Zheng, P Wang, B Sheng, T Wang, X Rong, ... Applied Physics Letters 112 (16), 2018 | 26 | 2018 |
| Single-photon emission from isolated monolayer islands of InGaN X Sun, P Wang, T Wang, L Chen, Z Chen, K Gao, T Aoki, M Li, J Zhang, ... Light: Science & Applications 9 (1), 159, 2020 | 25 | 2020 |
| Experimental evidence of large bandgap energy in atomically thin AlN P Wang, T Wang, H Wang, X Sun, P Huang, B Sheng, X Rong, X Zheng, ... Advanced Functional Materials 29 (36), 1902608, 2019 | 22 | 2019 |
| Drive high power UVC‐LED wafer into low‐cost 4‐inch era: effect of strain modulation S Liu, Y Yuan, L Huang, J Zhang, T Wang, T Li, J Kang, W Luo, Z Chen, ... Advanced Functional Materials 32 (19), 2112111, 2022 | 20 | 2022 |
| Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration F Liu, T Wang, Z Zhang, T Shen, X Rong, B Sheng, L Yang, D Li, J Wei, ... Advanced Materials, 2106814, 2021 | 20 | 2021 |
| High‐mobility two‐dimensional electron gas at InGaN/InN heterointerface grown by molecular beam epitaxy T Wang, X Wang, Z Chen, X Sun, P Wang, X Zheng, X Rong, L Yang, ... Advanced Science 5 (9), 1800844, 2018 | 20 | 2018 |
| Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods P Wang, X Wang, T Wang, CS Tan, B Sheng, X Sun, M Li, X Rong, ... Advanced Functional Materials 27 (9), 1604854, 2017 | 20 | 2017 |
| Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers S Liu, B Sheng, X Wang, D Dong, P Wang, Z Chen, T Wang, X Rong, D Li, ... Applied Physics Letters 112 (23), 2018 | 19 | 2018 |
