| High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata IEEE Electron Device Letters 38 (7), 906-909, 2017 | 201 | 2017 |
| High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata Applied Physics Letters 110 (19), 2017 | 195 | 2017 |
| Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors S Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ Pearton Applied Physics Letters 109 (6), 2016 | 118 | 2016 |
| Temperature-dependent characteristics of Ni/Au and Pt/Au Schottky diodes on β-Ga2O3 S Ahn, F Ren, L Yuan, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 6 (1), P68, 2017 | 101 | 2017 |
| Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors S Ahn, YH Lin, F Ren, S Oh, Y Jung, G Yang, J Kim, MA Mastro, JK Hite, ... Journal of Vacuum Science & Technology B 34 (4), 2016 | 85 | 2016 |
| Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ... Applied Physics Letters 110 (14), 2017 | 67 | 2017 |
| Inductively coupled plasma etching of bulk, single-crystal Ga2O3 J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ... Journal of Vacuum Science & Technology B 35 (3), 2017 | 52 | 2017 |
| Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors S Ahn, F Ren, S Oh, Y Jung, J Kim, MA Mastro, JK Hite, CR Eddy, ... Journal of Vacuum Science & Technology B 34 (4), 2016 | 40 | 2016 |
| Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors J Lee, A Yadav, M Antia, V Zaffino, E Flitsiyan, L Chernyak, J Salzman, ... Radiation Effects and Defects in Solids 172 (3-4), 250-256, 2017 | 31 | 2017 |
| Thermal stability of implanted or plasma exposed deuterium in single crystal Ga2O3 S Ahn, F Ren, E Patrick, ME Law, SJ Pearton ECS Journal of Solid State Science and Technology 6 (2), Q3026, 2016 | 23 | 2016 |
| Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide S Ahn, BJ Kim, YH Lin, F Ren, SJ Pearton, G Yang, J Kim, II Kravchenko Journal of Vacuum Science & Technology B 34 (5), 2016 | 23 | 2016 |
| Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 S Ahn, F Ren, E Patrick, ME Law, SJ Pearton, A Kuramata Applied Physics Letters 109 (24), 2016 | 21 | 2016 |
| Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing L Liu, Y Xi, S Ahn, F Ren, BP Gila, SJ Pearton, II Kravchenko Journal of Vacuum Science & Technology B 32 (5), 2014 | 19 | 2014 |
| Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3 R Sharma, E Patrick, ME Law, S Ahn, F Ren, SJ Pearton, A Kuramata ECS Journal of Solid State Science and Technology 6 (12), P794, 2017 | 16 | 2017 |
| Optical signature of the electron injection in Ga2O3 J Lee, E Flitsiyan, L Chernyak, S Ahn, F Ren, L Yuna, SJ Pearton, J Kim, ... ECS Journal of Solid State Science and Technology 6 (2), Q3049, 2016 | 15 | 2016 |
| Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes BJ Kim, YH Hwang, S Ahn, F Ren, SJ Pearton, J Kim, TS Jang Journal of Vacuum Science & Technology B 33 (5), 2015 | 15 | 2015 |
| Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors S Ahn, C Dong, W Zhu, BJ Kim, YH Hwang, F Ren, SJ Pearton, G Yang, ... Journal of Vacuum Science & Technology B 33 (5), 2015 | 15 | 2015 |
| Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors BJ Kim, S Ahn, F Ren, SJ Pearton, G Yang, J Kim Journal of Vacuum Science & Technology B 34 (4), 2016 | 13 | 2016 |
| Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs YH Hwang, S Ahn, C Dong, W Zhu, BJ Kim, L Le, F Ren, AG Lind, J Dahl, ... Journal of Vacuum Science & Technology B 33 (3), 2015 | 9 | 2015 |
| Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping TS Kang, YH Lin, S Ahn, F Ren, BP Gila, SJ Pearton, DJ Cheney Journal of Vacuum Science & Technology B 34 (1), 2016 | 7 | 2016 |
